Technical Features
March 2013
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Figure 1: The Qorvo SiC FET – a ‘cascode’ of a Si-MOSFET and SiC JFET
The performance of wide band-gap (WBG) semiconductor switches such as silicon carbide cascode FETs (‘SiC FET’ henceforth) [1] (Figure 1) and SiC MOSFETs is closely tied to its package. At the pure technology level, nanosecond switching speed and low specific on-resistance result in very low losses, allowing much
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Date:
05/30/2023
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When used in a controlled temperature environment ranging from 0?C to 40?C (32?F to 104?F) any domestically available on-line UPS should meet the requirement, as most have been tested and approved
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Date:
03/12/2013
Figure 1: Conventional vertical power loop PCB layout (a) Side view (b) MOSFET top view (c) eGaN FET top view
Designers of point of load (POL) converters used in 24 VDC systems traditionally have had to decide between the high cost of an isolated converter and the low frequency and efficiency of a buck
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Date:
03/12/2013
Manufacturers are increasingly focusing their efforts on energy conservation. This trend is reflected in the growing emphasis on both renewable energy and energy efficiency measures to reduce the
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Date:
03/12/2013
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1. Biasing with a static DC voltage and measuring current: This is the most basic application of DC power related bench instruments. Any power supply, so long as it has the right voltage and current
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Date:
03/09/2013
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