Technical Features
March 2013
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Figure 1. Comparing SiC with conventional Silicon MOSFETs reveals the clearly superior semiconductor characteristics of the SiC material, which allows the construction of significantly smaller switching devices
The lower sheet resistance of wide-bandgap SiC materials (typically 1/100th that of conventional silicon) results in smaller devices for a given current capacity – valuable in space saving applications. In addition, the electric-breakdown- field for SiC (approximately 2.8 MV/cm) allows for a much
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Date:
12/03/2019
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When used in a controlled temperature environment ranging from 0?C to 40?C (32?F to 104?F) any domestically available on-line UPS should meet the requirement, as most have been tested and approved
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Date:
03/12/2013
Manufacturers are increasingly focusing their efforts on energy conservation. This trend is reflected in the growing emphasis on both renewable energy and energy efficiency measures to reduce the
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Date:
03/12/2013
Figure 1: Conventional vertical power loop PCB layout (a) Side view (b) MOSFET top view (c) eGaN FET top view
Designers of point of load (POL) converters used in 24 VDC systems traditionally have had to decide between the high cost of an isolated converter and the low frequency and efficiency of a buck
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Date:
03/12/2013
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1. Biasing with a static DC voltage and measuring current: This is the most basic application of DC power related bench instruments. Any power supply, so long as it has the right voltage and current
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Date:
03/09/2013
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