Technical Features

May 2014
Combining Lowest RDS(on) + SMT for Space-Limited, High-Performance Apps

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Figure 1: The Qorvo SiC FET – a ‘cascode’ of a Si-MOSFET and SiC JFET

The performance of wide band-gap (WBG) semiconductor switches such as silicon carbide cascode FETs (‘SiC FET’ henceforth) [1] (Figure 1) and SiC MOSFETs is closely tied to its package. At the pure technology level, nanosecond switching speed and low specific on-resistance result in very low losses, allowing much
Energy is an issue that affects every person on the planet. With the advancement of the Human Race, Energy Dependence has increased and this has strained the Earth’s natural resources. To make better use of the available resources, numerous efforts have been made to improve existing technology and change the wa
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