Wide-Bandgap Semis

    July 2019
    Transphorm's $18.5M Contract to Produce RF GaN Epi for Navy
    GOLETA, Calif.— Transphorm Inc. announced that the U.S. Department of Defense (DoD) Office of Naval Research (ONR) has exercised a three-year $15.9 million option on an existing $2.6 million base contract with the company. This contract, N68335-19-C-0107, administered by Naval Air Warfare Center Aircraft Div
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    Date:
    07/31/2019
    Gallium Nitride-Based AC-DC Converter ICs
    San Jose, Calif. – Power Integrations announced new members of its InnoSwitch 3 families of offline CV/CC flyback switcher ICs. The new ICs feature up to 95% efficiency across the full load range and up to 100 W in enclosed adapter implementations without requiring a heatsink. This groundbreaking increase in performa
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    Date:
    07/25/2019
    UnitedSiC adds 2 650V SiC FET Packages to UF3C FAST Series
    Princeton, New Jersey: UnitedSiC has added two new TO220-3L package options to its growing range of hard-switching UF3C FAST series of 650V SiC FETs. The new products offer RDS(on) values of 30mohms (UF3C065030T3S) (https://unitedsic.com/datasheets/DS_UF3C065030T3S.pdf) and 80mohms (UF3C065080T3S) (https://unitedsic.com/datasheets/DS_UF3C065080T3S.pdf). The three-leaded, industry-standard
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    Date:
    07/24/2019
    Electric Scooters Taking Off and Being Left Behind in France
    Welcome to the combined July/August issue of PSD. I hope you all have a relaxing break planned for over the summer to set you up for the second half of the year. I’ve been too busy myself to even stop and think about getting away. I did manage a couple of days away in Lyon after a meeting in Grenoble during the
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    Date:
    07/23/2019
    Powering the Future of Electric Vehicles

    Click image to enlarge

    Figure 1. SiC Schottky diodes and MOSFETs, like these pictured from Littelfuse, lower power switching losses compared to Si devices.

    Electric vehicles are poised for meteoric growth, rising from an estimated 6 million vehicles in 2019 to 16 million vehicles in 2023. New technologies are enabling this dramatic change, including more efficient power conversion and higher power density. New circuit protection strategies are also required to pr
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    Date:
    07/22/2019
    SiC Revolutionizes the Powertrain

    Click image to enlarge

    Figure 1 – Main components of an electric powertrain

    As the automotive industry moves towards zero-emissions transportation, auto manufacturers are swiftly ramping up their electrification programmes. Most OEMs plan to be ready to supply large volumes of battery electric vehicles (BEVs) as well as hybrid electric vehicles (HEVs) worldwide by 2025. To meet buye
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    Date:
    07/22/2019
    PSDcast - Qualifying SiC Devices to Stringent Standards

    Avi Kashyap with Microchip.

    In this episode of the PSDcast, we're talking to Avi Kashyap with Microchip about one of the biggest challenges for silicon carbide vendors - qualifying their SiC devices to stringent industrial, automotive, and harsh environment standards, one example being AEC- Q101, a stress test qualification for automotive-grade dis
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    Date:
    07/11/2019
    Nanoscale Visualization of Optical Behavior of Dopant in GaN

    Results of cathodoluminescence analysis applied to Mg ion-implanted GaN (left) and three-dimensional distribution of Mg atoms introduced into GaN as visualized by atom probe tomography (right).

    In Gallium Nitride (GaN) implanted with a small amount of magnesium (Mg), NIMS succeeded for the first time in visualizing the distribution and optical behavior of the implanted Mg at the nanoscale which may help in improving electrical performance of GaN based devices. Some of the mechanisms by which introduced Mg
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    Date:
    07/09/2019
    Are you SiC of Silicon? – Part 4

    Anup Bhalla, Vice President Engineering, UnitedSiC

    How to Build Better EV Traction Inverters with SiC In this article, we examine the benefits of applying SiC technology to EV traction inverters. We show how the efficiency of the inverter is boosted under all loading conditions, from light to full load. Using higher operating voltages with efficient 1200V SiC
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    Date:
    07/08/2019
    Archive

    Transformer Design Comparisons for Mitigating EMI in Gate Driver Circuits

    Mar 29,2026
    Matthew Russell, Master’s student at University College Cork, and a student engineer at Bourns Electronics Ireland

    Wide Bandgap Devices Deliver on Their Promise

    Jan 26,2026
    Kevin Parmenter, Pins Out Engineering, for TSC America, Inc.

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