Wide-Bandgap Semis
May 2022
The CEO of GaN Systems, Jim Witham
One of the leaders in gallium nitride power semiconductors just announced an exciting deal with consumer giant Samsung – the company in question, GaN Systems, will see its high-efficiency semiconductor products power the flagship Samsung Galaxy S22+ and Ultra smartphones. On the line, we’ve got one of ou
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Date:
05/24/2022
Navitas Semiconductor officially announced that its next- generation GaNFast power ICs with GaNSense technology have been used in Lenovo's newly-released Legion C135 GaN charger, and featured on the Nasdaq Tower in Times Square, New York.
Lenovo’s Legion 5 and 5 Pro Gen 7 laptops are significan
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Date:
05/12/2022
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Figure 1: The block diagram of the MDC901 GaN gate driver
The entire ecosystem surrounding GaN HEMTs, which includes active and passive components like gate drivers, inductors and capacitors as well as the design techniques to implement the devices effectively, must quickly evolve to realize GaN’s full potential. As the device directly controlling the GaN HEMTs, th
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Date:
05/01/2022
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Figure 1: The evolution of process technologies improves upon the trench gate structure for a lowered on-resistance per unit area
Power is arguably the most critical part of next-generation electric vehicles, alternative energy systems, and data centers, and industrial power supplies are increasingly reliant on efficient operations to save on energy costs and increase the effectiveness of their subsystems/equipment. In these applications, eve
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Date:
05/01/2022
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