Wide-Bandgap Semis
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Brandon Grainger (left) and Paul Ohodnicki received $820,000 from the Office of Naval Research to create new materials and manufacturing processes for ultra-wide bandgap semiconductors.
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Figure 1: Key features required for AC-DC SMPS in the latest generation of telecom applications
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Table 1a: Key performance indicators of silicon (Si)-based superjunction technology CoolMOS™ C7 compared to SiC MOSFET CoolSiC™ and GaN HEMT technology CoolGaN™
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Figure 1: Comparison of temperature dependency of the on-state resistance for different semiconductor technologies, such as Infineon’s CoolMOS™, CoolSiC™, and CoolGaN™
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Figure 1: Circuit diagram of the proposed solution using CoolMOS™ in a half-bridge configuration
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Figure 1. Simplified circuit of the active clamp flyback (ACF) topology
