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    Wide-Bandgap Semis

    May 2021
    A gate driver solution for EMI mitigation without compromise

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    A gate driver solution for EMI mitigation without compromise
    Ally Winning, European Editor, PSD

    It is not just efficiency that benefits from faster switching. There are further advantages, including a reduced BoM, and as efficient designs give off less heat, they don’t require such large heatsinks, leading to smaller and cheaper system solutions. However, high switching speeds have a downside that can of
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    Date:
    05/18/2021
    Best-in-class 65W USB-C PD GaN Adapter Reference Design
    Best-in-class 65W USB-C PD GaN Adapter Reference Design
    Transphorm, Inc. and Silanna Semiconductor announced a world-class GaN power adapter reference design. The solution is an open frame, 65W USB-C Power Delivery (PD) charger that combines Transphorm’s SuperGaN Gen IV platform with Silanna Semiconductor’s proprietary Active Clamp Flyback (ACF) PWM controller. To
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    Date:
    05/17/2021
    Building a Foundation for High-Power Tech

    Brandon Grainger (left) and Paul Ohodnicki received $820,000 from the Office of Naval Research to create new materials and manufacturing processes for ultra-wide bandgap semiconductors.

    Building a Foundation for High-Power Tech
    University of Pittsburgh

    As electrification advancement accelerates and more renewables are integrated into the electric grid, improved power electronics systems are needed to convert AC or DC power into a usable form. New semiconductor device materials and advanced magnetic materials can enable an unprecedented combination of voltage le
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    Date:
    05/16/2021
    Server / Telecom - Si and WBG solutions: Part 3 of 4 Editorial Series Sponsored by Infineon; Towards Efficient, Reliable, and Cost-Effective Power Supply Units for 5G Telecom Rectifiers Applications Using Wide-Bandgap Semiconductors

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    Figure 1: Key features required for AC-DC SMPS in the latest generation of telecom applications

    Server / Telecom - Si and WBG solutions: Part 3 of 4 Editorial Series Sponsored by Infineon; Towards Efficient, Reliable, and Cost-Effective Power Supply Units for 5G Telecom Rectifiers Applications Using Wide-Bandgap Semiconductors
    Francesco Di Domenico, Lead Principal Application Engineer, Infineon Technologies

    The 5G spectrum has been released in several countries worldwide and already in commercial use. 5G is accelerating and promises to change our lives thanks to large bandwidth, massive connection, and ultra-low latency. On top of this network evolution, we need to consider the advancements in the so-called mobile ed
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    Date:
    05/07/2021
    Server / Telecom - Si and WBG solutions: Part 4 of 4 Editorial Series Sponsored by Infineon; Design Guidelines for High Power Server and Telecom Power Supplies Use-Cases

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    Table 1a: Key performance indicators of silicon (Si)-based superjunction technology CoolMOS™ C7 compared to SiC MOSFET CoolSiC™ and GaN HEMT technology CoolGaN™

    Server / Telecom - Si and WBG solutions: Part 4 of 4 Editorial Series Sponsored by Infineon; Design Guidelines for High Power Server and Telecom Power Supplies Use-Cases
    Dr. Gerald Deboy, Distinguished Engineer Power Semiconductors and System Engineering, Infineon Technologies

    Introduction With the recent introduction of active wide bandgap (WBG) power semiconductors on a broad commercial scale, the number of use cases is rapidly increasing. High power applications such as power supplies for server and telecom have been among the first adaptors driving acceptance and early success stories.
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    Date:
    05/07/2021
    Server / Telecom - Si and WBG solutions: Part 2 of 4 Editorial Series Sponsored by Infineon; How to Reap the Benefits of Wide-Bandgap Semiconductors in Server Applications

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    Figure 1: Comparison of temperature dependency of the on-state resistance for different semiconductor technologies, such as Infineon’s CoolMOS™, CoolSiC™, and CoolGaN™

    Server / Telecom - Si and WBG solutions: Part 2 of 4 Editorial Series Sponsored by Infineon; How to Reap the Benefits of Wide-Bandgap Semiconductors in Server Applications
    Matthias Kasper, Principal Engineer Power Operated Systems, Sam Abdel-Rahman, Lead Principal Application Engineer, Juan Sanchez, Senior Principal Power Systems Application Engineer, Infineon Technologies

    The emergence of cloud-based internet services, artificial intelligence, and cryptocurrency has initiated a strong growth of processing power in data centers worldwide. Since the data centers have also been facing rising electricity and real estate prices, there is a clear trend towards highly efficient and co
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    Date:
    05/06/2021
    Server / Telecom - Si and WBG solutions: Part 1 of 4 Editorial Series Sponsored by Infineon; Innovative Silicon Solution for Highest PFC Efficiency

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    Figure 1: Circuit diagram of the proposed solution using CoolMOS™ in a half-bridge configuration

    Server / Telecom - Si and WBG solutions: Part 1 of 4 Editorial Series Sponsored by Infineon; Innovative Silicon Solution for Highest PFC Efficiency
    Rafael Garcia, Principal System Applications Engineer, Infineon Technologies

    Introduction As a result of the pandemic that lately has had a significant impact on our lives, communication networks became a crucial part of critical social infrastructure. To achieve the required server capacities and fast connectivity and address the challenges of this unprecedented situation and, highly
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    Date:
    05/03/2021
    The Next Revolutionary Step for Low Power

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    Figure 1. Simplified circuit of the active clamp flyback (ACF) topology

    The Next Revolutionary Step for Low Power
    By: Eric Persson, Senior Principal Engineer, Infineon Technologies Americas

    Introduction It is estimated that 4 billion chargers and adapters are produced globally every year. They charge our mobile phones, tablets, wearables, and the myriad of other consumer electronic goods we consume continuously. The cost of the adapter is undoubtedly a significant consideration for original equipme
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    Date:
    05/01/2021
    Archive

    Transformer Design Comparisons for Mitigating EMI in Gate Driver Circuits

    Mar 29,2026
    Matthew Russell, Master’s student at University College Cork, and a student engineer at Bourns Electronics Ireland

    STMicroelectronics' new MasterGaN power ICs Combine Flexibility with Advanced GaN Technology

    Feb 24,2026

    Wide Bandgap Devices Deliver on Their Promise

    Jan 26,2026
    Kevin Parmenter, Pins Out Engineering, for TSC America, Inc.

    onsemi to Develop Next-Generation GaN Power Devices with GlobalFoundries

    Dec 18,2025

     

     

     

     

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