Wide-Bandgap Semis

February 2019
SiC-MOSFET Gate Driver Maximizes Efficiency, Improves Safety
San Jose, Calif. – Power Integrations announced the SIC1182K SCALE-iDriver, a high-efficiency, single-channel silicon carbide (SiC) MOSFET gate driver that delivers the highest peak-output gate current available without an external boost stage. Devices can be configured to support different
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Date:
02/26/2019
EPC Publishes Reliability Report Highlighting GaN Testing
EL SEGUNDO, Calif.— EPC announces its Phase Ten Reliability Report, documenting the test results leading to the successful completion of automotive AEC-Q101 qualification. AEC-Q101 demands the highest level of reliability standards for power FETs, requiring not only zero datasheet failures, but also low parametric
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Date:
02/26/2019
PSD Celebrating 15 Years of Publishing

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Jim & Julia Graham

2019 has arrived and it marks a Big Anniversary for the PSD team!  PSD is celebrating our 15th year in publishing for the global power electronic engineering community.  Back in 2004, when the "big publishers" decided that they would close magazines like PCIM Europe
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Date:
02/25/2019

Slightly more than forty years ago, the silicon power MOSFET was a disruptive technology that displaced the bipolar transistor as the power conversion device of choice for the semiconductor industry – and a $12B market emerged.
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Date:
02/24/2019
SiC Schottky Diodes Offer Improved Efficiency
CHICAGO — Littelfuse, Inc. introduced two second-generation series of 650V, AEC-Q101-qualified silicon carbide (SiC) Schottky Diodes. The LSIC2SD065CxxA and LSIC2SD065AxxA Series SiC Schottky Diodes are available with a choice of current ratings (6A, 8A, 10A, 16A or 20A). They offer power
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Date:
02/12/2019
PSDcast â€
In this episode of the PSDcast, we’re discussing the past, present, and future of wide bandgap semiconductors. For the last four years, one of the biggest advocates for wide bandgap devices has been
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Date:
02/07/2019