Wide-Bandgap Semis

March 2023

Material properties of GaN & SiC relative to Si. Source: IDTechEx

The Tantalizing Potential for GaN in Electric Vehicle Power Electronics

IDTechEx

As electric vehicle (EV) power electronics undergoes a paradigm shift towards wide bandgap (WBG) semiconductors, it is clear that silicon carbide (SiC) is becoming the material of choice, while gallium nitride (GaN) is often shoe-boxed into telecommunications or optoelectronics applications. In part, this is

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Date:

03/24/2023

Qorvo Delivers 5.4 mΩ 750V SiC FETs in TOLL Package for High Power Applications

Qorvo will showcase a new surface-mount TO-leadless (TOLL) package for its high-performance, 5.4 milliohm (mΩ) 750V SiC FETs. This is the first product in a family of 750V SiC FETs that will be released in the TOLL package with on-resistance ranging from 5.4 mΩ to 60 mΩ. These devices are ideal for us

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Date:

03/21/2023

Sharge Selects GaN FETs from EPC for High-power USB PD Charger

Efficient Power Conversion has teamed up with SHARGE Technology (SHARGE) to design a 67 W USB PD charger with a power display screen. The Retro 67 fast charger uses EPC’s 100 V GaN FET, EPC2218, which can deliver 231 A pulsed current in a tiny footprint of 3.5 mm x 1.95 mm offering designers a significantly sm

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Date:

03/15/2023

Navitas Distribution Deal with Richardson Electronics Expands Americas Footprint for Next-Gen SiC Semiconductors

Navitas Semiconductor has announced a distribution agreement with Richardson Electronics, Ltd. covering next-generation silicon carbide (SiC) power semiconductors for the Americas. Richardson Electronics will focus on Navitas’ world-leading GeneSiC power MOSFETs and MPS diodes that are rated from 650

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Date:

03/15/2023

ROHM's SiC SBDs Chosen by Murata Power Solutions for Data Center PSUs

ROHM Semiconductor announced that Murata Power Solutions is using its high performance silicon carbide (SiC) Schottky Barrier Diodes (SBDs) to increase performance and reduce the size of Power Supply Units (PSUs) for data center applications. ROHM’s SCS308AH SiC SBDs feature high surge re

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Date:

03/08/2023

Infineon CEO Jochen Hanebeck

Infineon Acquires GaN Systems for $830 Million, Expanding its Gallium Nitride Portfolio

Infineon and GaN Systems just dropped a bombshell in the lead-up to the biggest power show of the year – Infineon will acquire GaN Systems for US $830 million. With the Applied Power and Electronics Conference (APEC) less than a fortnight away, this definitely shakes up the balance of power and adds an i

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Date:

03/08/2023

Lawrence Livermore National Laboratory Chooses SemiQ’s Silicon Carbide Device for Particle Accelerator Project

Lawrence Livermore National Laboratory has chosen SemiQ, Inc. to supply Silicon Carbide diodes for an ongoing particle accelerator project. SemiQ developed its top-side solderable 1200V 10A silicon carbide diode in a SMC package to withstand continuous high current pulse operation at 15 times rated current.

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Date:

03/07/2023

Kevin Parmenter, Director, Applications Engineering. TSC, America

Wide Bandgap Devices and "The Law of the Farm"

Kevin Parmenter, Director, Applications Engineering. TSC, America

It was only a matter of time for wide bandgap products to find broad acceptance in real-world applications. According to the analysis firm Yole, for instance, silicon carbide is driving the revolution in transportation and creating a multi-billion-dollar market. SiC devices are already being deployed in EVs an

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Date:

03/01/2023

Click image to enlarge

Figure 1: SiC devices offer superior properties to legacy silicon, including higher efficiency, faster switching speeds, and exceptional thermal dissipation

SiC Delivers Next-Generation Efficiency and Sustainability

Llew Vaughan-Edmunds, Senior Director Marketing, Navitas Semiconductor

Silicon carbide (SiC) is a critically important technology as high-power, high-speed applications test the limits of conventional silicon. Next-generation systems not only continue to push the boundaries of performance and capability, but also disrupt and replace systems that burn fossil fuels (e.g. transportation, el

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Date:

03/01/2023

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Figure 1: The loop from switch to DC link capacitor can be long and have significant inductance

PCB Design Considerations with SiC FETs

Mike Zhu, application engineer at Qorvo

Optimising PCB layout in a power converter design is a complex task at the best of times, but there can be extra challenges when you have to allow for the ultra-fast voltage and current edge rates seen with wide band-gap devices such as a SiC FET, a normally-off, cascode combination of a SiC JFET and Si-MOSFET. Th

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Date:

03/01/2023

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Figure 1: Simplified schematic diagram of the bi-directional converter

GaN-Based Design of a 2 kW 48 V/12 V Bi-Directional Power Module for 48 V Mild Hybrid Electric Vehicles

Michael de Rooij, EPC

The hybrid vehicle market has more than doubled from 2017 from 2.0% to 5.1% and by 2025, one of every 10 vehicles sold worldwide is projected to be a 48 V mild hybrid. 48 V systems boost fuel efficiency, deliver four times the power without increasing engine size, and reduce carbon-dioxide emissions without in

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Date:

03/01/2023

Ally Winning, European Editor, PSD

WBG Materials Coming of Age

Ally Winning, European Editor, PSD

As we head into Spring, hopefully as the weather picks up, it gives the economy a bit of a lift too. It’s definitely been a tough few years with the COVID-19 pandemic followed closely by the war in Ukraine. Both of these events have disrupted the global supply chain and led to spiralling inflation. However

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Date:

03/01/2023