Wide-Bandgap Semis
August 2024
ROHM's 4th Generation SiC MOSFET Bare Chips Adopted in Three EV Models of ZEEKR from Geely
ROHM Semiconductor announced the adoption of power modules equipped with 4th generation SiC MOSFET bare chips for the traction inverters in three models of ZEEKR EV brand from Zhejiang Geely Holding Group (Geely), a top 10 global automaker. Since 2023, these power modules have been mass produced an
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Date:
08/30/2024
Infineon CEO Jochen Hanebeck, Malaysian Prime Minister YAB Dato’ Seri Anwar Ibrahim and Chief Minister of the state of Kedah YAB Dato’ Seri Haji Muhammad Sanusi Haji Mohd symbolically launched production of phase one of Infineon’s leading 200mm SiC Power Fab.
As global decarbonization efforts drive demand for power semiconductors, Infineon Technologies AG has officially opened the first phase of a new fab in Malaysia that will become the world’s largest and most competitive 200-millimeter silicon carbide (SiC) power semiconductor fab. Malaysian Prime Minister YA
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Date:
08/08/2024
Click image to enlarge
Figure 1: Example of threshold voltage as a function of temperature
Wide bandgap semiconductor technology has given electronics designers new degrees of freedom in their approach to high-power electronic circuitry. Silicon carbide (SiC) transistors in particular promise the ability to operate reliably and efficiently at higher temperatures than is possible with conventional si
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Date:
08/01/2024
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