Wide-Bandgap Semis
February 2024
Geoff Breed, Vice President Marketing TTI, Inc. – Europe
TTI, Inc. – Europe, a leading specialty distributor of Interconnect, Passive, Electromechanical, Sensor, Discrete and Powercomponents, announces the acquisition of Raffenday Ltd.
With production and a distribution center in the UK plus facilities in Slovakia, Raffenday’s high-quality, technical
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Date:
02/21/2024
Navitas Powers Samsung Galaxy S24 with Integrated AI
Navitas Semiconductor has announced that its GaNFast™ power ICs drive Samsung’s 25 W “Super-Fast Charging” (SFC) for the new, AI-enhanced Galaxy S24 smartphone.
Flagship hardware specifications include a 2340 x 1080 (FHD+) dynamic AMOLED 2X, and 120 Hz screen,&nbs
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Date:
02/21/2024
ROHM has developed 100V breakdown Schottky barrier diodes (SBDs) that deliver industry-leading reverse recovery time (trr).
The SBDs are intended for applications including power supply and protection circuits in automotive, industrial, and consumer applications.
Although numerous types of diodes exist, highly efficient SBDs are increasingly being used inside a variety of applications. Particularly SBDs with a trench
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Date:
02/18/2024
Samtec 0.635 mm pitch, Slim Body Edge Rate Connectors
It also includes a lower-profile 5 mm mated height. ERF6 & ERM6 Series Edge Rate connectors support 56 Gbps PAM4 high-speed, rugged mezzanine applications for industrial, embedded vision, instrumentation and monitoring, drones, and robotics.
ERF6 & ERM6 have two rows of pins while ma
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Date:
02/18/2024
Hidetoshi Shibata, CEO of Renesas
Renesas Electronics Corporation and Altium Limited (“Altium”, ASX: ALU), a global leader in electronics design systems, today announced they have entered into a Scheme Implementation Agreement (“SIA”) for Renesas to acquire Altium by way of a Scheme of Arrangement under Australian law (“Scheme”). Un
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Date:
02/15/2024
Alpha and Omega Semiconductor has announced the AONA66916, a 100V MOSFET packaged in a top and bottom side cooling DFN 5 x 6 package.
Delivering a state-of-the-art package that keeps its semiconductor products cooler, AOS is taking a huge step in enabling engineers to develop more efficient designs in telecommunications and industrial applications that must frequently operate in harsh conditions.
Typically, when using
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Date:
02/12/2024
100V Bi-Directional GaN IC for 48V/60V Battery Management System Applications
Innoscience Technology has launched a new 100V bi-directional member of the company’s VGaN IC family. The first family of VGaN devices rated 40V with wide on-resistance range (1.2mOhm – 12mOhm) have been successfully deployed in the USB OVP of mobile phones such as OPPO, OnePlus etc.
The new 100V
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Date:
02/12/2024
Pacific Power Source’s Director of Marketing, Herman vanEijkelenburg
The AGX Series, from Pacific Power Source, uses advanced Silicon Carbide power devices, is good for a wide range of AC and DC power test applications, and the company will be showing off the series at APEC. And on the line to discuss it is Pacific Power Source’s Director of Marketing, Herman vanEijkel
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Date:
02/11/2024
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Joint Lab for NEV Developments with GaN and SiC Technology
Navitas Semiconductor and SHINRY announced the opening of a joint R&D power laboratory to accelerate the development of New-Energy Vehicle (NEV) power systems enabled by Navitas' GaNFast™ technology. SHINRY is active in on-board power supplies and strategic supplier to Honda, Hyundai, BYD, Geely, XPENG, BAIC
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Date:
02/06/2024
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Collaboration in Manufacturing Power Devices
A plan by ROHM and Toshiba Electronic Devices & Storage Corporation to collaborate in the manufacture and increased volume production of power devices has been recognized and will be supported by the Ministry of Economy, Trade and Industry as a measure supporting the Japanese Government's target of secure and st
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Date:
02/06/2024
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Power Semiconductor Modules for EVs and PHEVs
Mitsubishi Electric Corporation announced the coming release of six J3-Series power semiconductor modules for various electric vehicles (xEV), featuring either a silicon carbide metal-oxide semiconductor field-effect transistor (SiC-MOSFET) or a RC-IGBT (Si), with compact designs and scalability for use in the in
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Date:
02/06/2024
Jason Lomberg, North American Editor, PSD
We’re here. The lavish gala we’ve all been waiting for. The Super Bowl of our industry. The most important event of the year.
For us, the Applied Power Electronics Conference is more than just a trade show, an exhibition for all things power and power-adjacent. It’s the totality of everything we repres
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Date:
02/04/2024
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Figure 1: Doped silicon transistor cross section compared to GaN HEMT
The high electron mobility transistor (HEMT) is a relative newcomer in the world of mass-produced power switching devices. Unlike its traditional doped Silicon counterpart, HEMTs are heterojunction devices built using two semiconductor materials with distinct bandgap voltages. First demonstrated in the late 19
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Date:
02/04/2024
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Offline Flyback Switcher IC with Zero-Voltage Switching (ZVS) for 95 % Efficiency
Power Integrations has released the InnoSwitch5-Pro family of high-efficiency, programmable flyback switcher ICs. The single-chip switcher achieves over 95 percent efficiency with a novel secondary-side control scheme which achieves zero-voltage switching (ZVS) without a dedicated and costly additional high-volta
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Date:
02/04/2024
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Renesas to Acquire Transphorm: Expanding its Power Portfolio with GaN Technology
Renesas Electronics and Transphorm announced that they have entered into a definitive agreement pursuant to which a subsidiary of Renesas will acquire all outstanding shares of Transphorm's common stock. The transaction values Transphorm at approximately $339 million. The acquisition will provide Renesas with in-house
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Date:
02/04/2024
Kevin Parmenter, Director, Applications Engineering. TSC, America
The global wide bandgap semiconductor (WBGS) market is experiencing significant growth. Valued at $1.6 billion in 2022, this market is projected to reach $5.4 billion by 2032, growing at a CAGR of 13.2% from 2023, according to Allied Market Research. I notice that every power conference in recent years talks about this
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Date:
02/01/2024
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Figure 1. Typical GaN PA control system
Systems that incorporate highly integrated and highly sophisticated, high power radio frequency (RF) GaN power amplifiers (PAs), such as pulsed radar applications, are a constant challenge for today’s digital control and management systems to keep up with these ever-increasing levels of sophistication.These co
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Date:
02/01/2024
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Table 1: GaN (EPC2071) vs. Silicon Comparison
The adoption of gallium nitride (GaN) in power devices has seen significant growth in recent years. In this article the various factors impacting the adoption of GaN are examined as well as how these challenges are being addressed and overcome. With over 14 years of volume production experience, EPC has id
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Date:
02/01/2024
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Ally Winning, European Editor, PSD
Welcome to the February edition of Power Systems Design Europe. We now know that 2023 was the hottest year on record. Even though it narrowly missed breaching the key international climate target of 1.5oC over the long-term average with a final reading of 1.48oC, the predictions are that this year will be even h
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Date:
02/01/2024
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