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Wide-Bandgap Semis

March 2022
Module Lifetime Estimation Tool
Module Lifetime Estimation Tool
Ally Winning

Estimating the useable lifetime of electronic components has always been an important task for design engineers, especially for critical applications where the design might see service for several decades. Although manufacturers do specify a lifetime on datasheets, that is under ideal conditions at normal operati
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Date:
03/30/2022

Electrothermal models cover MOSFET operating temperature range
Electrothermal models cover MOSFET operating temperature range
Semiconductor manufacturers commonly provide simulation models for their MOSFETs, but these usually only include a limited number of device parameters which have been modelled at typical operating temperatures. Nexperia’s new advanced models capture the thermal interdependency of the complete set of device pa
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Date:
03/28/2022
50W GaN converter enables high-efficiency power designs
50W GaN converter enables high-efficiency power designs
With its single-switch topology and high integration, including current-sensing and protection circuitry also built-in, the VIPerGaN50 comes in a compact and low-cost 5mm x 6mm package. The speed of the integrated GaN transistor allows a high switching frequency with a small and lightweight flyback transformer
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Date:
03/28/2022
ROHM starts production of 150V GaN HEMTs
ROHM starts production of 150V GaN HEMTs
The components will ideally be applied in power supply circuits for industrial equipment such as base stations and data centers along with IoT communication devices.   In recent years – due to the rising demand for server systems in response to the growing number of IoT devices – improving powe
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Date:
03/28/2022
High-Efficiency Quasi-Resonant PFC IC with 750 V GaN Switch
High-Efficiency Quasi-Resonant PFC IC with 750 V GaN Switch
Power Integrations announced the HiperPFS™-5 family of power-factor-correction (PFC) ICs with an integrated 750 V PowiGaN gallium-nitride switch. With efficiency of up to 98.3 percent, the new ICs deliver up to 240 W without a heat sink and can achieve a power factor of better than 0.98. HiperPFS-5 ICs are i
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Date:
03/28/2022
10W and 15W units added to low profile open frame power supplies
10W and 15W units added to low profile open frame power supplies
Benefiting from the latest power switching technologies, the LHA10F and LHA15F are 15% smaller and offer a leakage current 50% lower than conventional products on the market. Designed for use in a wide range of applications, the LHA10F and LHA15F are able to operate in a wide temperature range from -10 to +70 degr
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Date:
03/28/2022
Navitas Announces World’s First 20-Year Warranty for GaN ICs
Navitas Announces World’s First 20-Year Warranty for GaN ICs
Navitas Semiconductor has announced a breakthrough 20-year limited warranty for its GaNFast technology – 10x longer than typical silicon, SiC or discrete GaN power semiconductors – and a critical accelerator for GaN’s adoption in data center, solar and EV markets.   GaN is a next-generation semiconductor te
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Date:
03/28/2022
Infineon releases new EiceDRIVER 2EDN product family
Infineon releases new EiceDRIVER 2EDN product family
Aiming at space-limited designs, the next-generation devices complement the existing 2EDN driver ICs by providing higher system-level efficiencies, excellent power density, and consistent system robustness with fewer external components. Building upon this expansion, the 2EDN family is now able to drive the power s
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Date:
03/28/2022
Infineon is launching EDT2 IGBTs in a TO247PLUS package
Infineon is launching EDT2 IGBTs in a TO247PLUS package
The devices are optimized for automotive discrete traction inverters and expand Infineon's portfolio of discrete high-voltage devices for automotive applications. Due to their high quality, the IGBTs meet and exceed the industry standard AECQ101 for automotive components. As a result, the devices can significantly increa
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Date:
03/28/2022
PSDcast – The Growth and Market for Silicon Carbide

Infineon’s VP of Silicon Carbide, Peter Friedrichs

PSDcast – The Growth and Market for Silicon Carbide
We’re all familiar with GaN and SiC at this point, and they’ve begun to infiltrate nearly every corner of the market. But several questions remain, and here with us to talk about wide bandgap devices is Infineon’s VP of Silicon Carbide, Peter Friedrichs.
Date:
03/23/2022
140W Power Supply Design with High- and Low-Voltage GaN Switches

Dr. Denis Marcon, General Manager of Innoscience Europe and Marketing Manager for the USA and Europe

140W Power Supply Design with High- and Low-Voltage GaN Switches
Innoscience Technology announced a new ultra-high-density 140W power supply demo that uses the company's high- and low-voltage GaN HEMT devices to achieve efficiencies of over 95% (230VAC; 5V/28A). Measuring just 60x60x22mm (2.4x2.4x0.9in) the PSU has a class-leading power density of 1.76W/cm3 (29W/in3). Dr. Denis Marcon,
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Date:
03/22/2022
Silanna Semiconductor and Smarter Living Collaborate on World's Smallest In-Wall 65W GaN Charger
Silanna Semiconductor and Smarter Living Collaborate on World's Smallest In-Wall 65W GaN Charger
Silanna Semiconductor, The Power Density Leader, and smart socket outlet specialist Smarter Living, have announced the world’s smallest 65W in-wall GaN (gallium nitride) fast charger. Measuring just 42mm x 42mm x 30mm, the new 3510PDFE charger is built around Silanna’s SZ1131 active clamp flyback (ACF) controller an
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Date:
03/21/2022
Active Front End Rectifier

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Active Front End Rectifier
Jonathan Dodge, P.E., UnitedSiC

1: Introduction Battery chargers for electric vehicles require galvanic isolation between the grid connection and the batteries. Therefore, an EV charger almost always has two stages: a high power-quality rectifier that converts AC to DC, followed by a DC-DC converter utilizing a high-frequency transformer
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Date:
03/15/2022
Lowest On-Resistance Rad Hard Transistor Available on the Market for Demanding Space Applications
Lowest On-Resistance Rad Hard Transistor Available on the Market for Demanding Space Applications
EPC announces the introduction of the EPC7019 radiation-hardened eGaN FET. The EPC7019, a 40 V, 1.5 mΩ, 530 APulsed, rad-hard eGaN FET in a small 13.9 mm2 footprint. The EPC7019 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices are offered in a chip-scale p
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Date:
03/15/2022
EPC, Analog Devices Deliver up to 2 MHz Switching Frequency for the Highest Density DC-DC Converters Using GaN FETs
EPC, Analog Devices Deliver up to 2 MHz Switching Frequency for the Highest Density DC-DC Converters Using GaN FETs
EPC announces the availability of the EPC9160, a dual output synchronous buck converter reference design board operating at 2 MHz switching frequency that converts an input voltage of 9 V to 24 V to a 3.3 V or 5 V output voltage and delivers up to 15 A continuous current for both outputs. Thanks to the hi
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Date:
03/14/2022
All-Silicon 45W Ultra-Efficient Production-Ready Fast Charger Reference Designs
All-Silicon 45W Ultra-Efficient Production-Ready Fast Charger Reference Designs
Silanna Semiconductor has further expanded its family of silicon- and GaN-based fast charger reference designs with an all-silicon option that will significantly reduce the time needed to develop high-density 45W applications. Supplied as a fully production-ready solution, the new RD-24 design provides everything ne
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Date:
03/11/2022
Wide Bandgap Comes Through Its Learning Curve
Wide Bandgap Comes Through Its Learning Curve
Kevin Parmenter, Director, Applications Engineering. TSC, America

The first wide bandgap devices that entered the market were oversold due to investors, VC capital companies and other players hoping for a quick return on investment. Some said, for example, that gallium nitride devices would completely replace and improve silicon in every application. This of course was a dream. Wide Bandgap t
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Date:
03/01/2022
Closing the Gap on Wide Band Gap Semiconductors?

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Figure 1: Experienced power designers have crossed that technological chasm many times, with the latest one being the migration from analog control to digital (Source: PRBX)

Closing the Gap on Wide Band Gap Semiconductors?
Patrick Le Fèvre, Chief Marketing and Communications Officer, Powerbox

For a power designer, any new technology that makes it possible to improve performance whilst simultaneously making products smaller and more energy efficient is a very exciting concept. Over the last century the world of power electronics has witnessed many innovations, with the latest major one being the move fr
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Date:
03/01/2022
Enabling Super-Dense Flyback Power Supplies

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Figure 1: A passive primary clamp RCD solution (highlighted) is highly dissipative and limits the efficiency and operating frequency of flyback power supplies

Enabling Super-Dense Flyback Power Supplies
Roland Saint Pierre, Director of New Product Definition, Power Integrations

Off-line flyback power supplies require a clamp circuit (sometimes called a snubber) on the primary side of the transformer to limit the drain-source voltage stress on the power MOSFET when this switch turns off during normal operation. There are several approaches to designing these clamp circuits. Low-cost pa
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Date:
03/01/2022
Roadblocks to GaN Adoption in Power Systems

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Figure 1: Pricing comparison between eGaN FETs and MOSFETs. Prices were for 1,000 pieces in February 2022

Roadblocks to GaN Adoption in Power Systems
Alex Lidow, CEO and Co-founder, Efficient Power Conversion

In many applications, such as lidar and space electronics, adoption of GaN has been extremely rapid.  Lidar flourished as a result of the extremely high speed of GaN devices, which is more than 10 times faster than the aging silicon MOSFET.  Space electronics has rapidly accepted GaN-on-Si power transistors du
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Date:
03/01/2022
Evaluating Voltage Regulator Stability Using Step Load Testing

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Figure 1: Test set up for VR stability evaluation

Evaluating Voltage Regulator Stability Using Step Load Testing
Masashi Nogawa, Staff Systems Engineer, Qorvo

Engineers are busy replacing and updating their aged PC boards that use traditional transistors, typically super-junction silicon MOSFETs and Insulated-Gate Bipolar Transistors (IGBTs). One hot area in this upgrading process is power supplies for pulse-load applications, such as laser pulse drivers, light bea
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Date:
03/01/2022
Approaches for Driving GaN Devices and Simplifying Gate Drive Design

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Figure 1. GaN transistors enable more efficient, cooler-running, compact, and cost-efficient designs

Approaches for Driving GaN Devices and Simplifying Gate Drive Design
Lucas Lu, GaN Systems

GaN offers low RDSon/VDSon, high electron mobility, and other characteristics that result in more efficient designs. Higher switching frequencies allow designers to make tradeoffs between efficiency and switching speed for application-optimized designs. These characteristics enable more efficient solutions, run
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Date:
03/01/2022
Why GaN Enables High Efficiency in Totem-Pole PFC-Based Power Designs

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Figure 1: PFC topologies: dual-boost PFC (a) and boost PFC (b)

Why GaN Enables High Efficiency in Totem-Pole PFC-Based Power Designs
Charlie Munoz, GaN Product Marketing Engineer, Texas Instruments

Almost all of the popular modern-day trends involve an AC/DC power supply, which takes energy from the AC grid and delivers it to the electrical equipment as a well-regulated DC. With the increasing power consumption in these systems, the associated energy losses in the AC/DC power conversion process becomes a si
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Date:
03/01/2022
A Focus on Wide Bandgap
A Focus on Wide Bandgap
Ally Winning, European Editor, PSD

Hopefully, all is well wherever you are based and things are returning to normal. March marks the start of Spring, and it is usually a time that is full on for the industry, with APEC, the largest power show in the Americas scheduled at the end of the month. APEC will return to an in-person format this year, so
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Date:
03/01/2022
Live from Houston, it’s APEC! (and the continual evolution of WBG)
Live from Houston, it’s APEC! (and the continual evolution of WBG)
Jason Lomberg, North American Editor, PSD

Our March issue focuses on arguably the hottest industry topic over the last several years, Wide Bandgap Technology. But first, later this month marks one of our industry’s most humble little victories over COVID-19, and that’s the Applied Power Electronics Conference’s (APEC’s) return to a fully in-person fo
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Date:
03/01/2022
Device Packaging is the Key to Effective Thermal Management

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Figure 1: OBC design presents a number of challenges to power designers

Device Packaging is the Key to Effective Thermal Management
By: Daniel Makus, Global Application Manager xEV and EV Charging and Severin Kampl, Senior Application Engineer for High-Voltage Power Conversion, both at Infineon Technologies AG

Within the automotive industry, development and innovation continue at a rapid pace in almost all aspects of vehicle design, from the chassis to the powertrain, infotainment, connectivity, and automation. However, with the time taken to recharge electric vehicles (EVs) – especially in-journey – being cited
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Date:
03/01/2022
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