Wide-Bandgap Semis

January 2019

EPC to Sponsor Inaugural GaN Con with Yole and SEMI

EPC is joining forces with Yole Développement (Yole) and SEMI to sponsor the first ever ‘GaN Con,’ an industry networking event covering the entire power GaN industry from manufacturers to end users. The theme of GaN Con is “Power GaN: From promises to possible market explosion” and is focused on the emergin

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Date:

01/30/2019

The Power and Evolution of GaN – Part 5

Alex Lidow, CEO and Co-founder of EPC

In this series, how the superior switching speed of gallium nitride (GaN)-on-silicon low voltage power devices have enabled many new applications is being discussed. These new applications are transforming industries such as light detection and ranging (lidar) for autonomous vehicles, envelope tracking for 4G and 5G communications

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Date:

01/23/2019

Looking Forward to 2019

2018 was a quite memorable year for power electronics and this year looks to be even more exciting. Of course, PSD will be there all the way to bring you the latest updates in the industry around the world. The main focal point of the year, at least in Europe, will be the PCIM exhibition, held in Nuremberg in Ju

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Date:

01/16/2019

FETs Help Lidar Systems 'See' Better, Increase Efficiency

EL SEGUNDO, Calif. — EPC announces successful AEC Q101 qualification of two additional eGaN devices, addressing a range of applications in the automotive industry and other harsh environments. The new products, EPC2206, and EPC2212 are both discrete transistors in wafer level chip-scale packaging (WLCS) with

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Date:

01/16/2019

Click image to enlarge

Figure 1 Cross section of a 600 V CoolGaN™ ™ power transistor [1]

Infineon Breaking Boundaries with Infineon’s New GaN Solution

Eric Persson, GaN Applications, Infineon Technologies AG

Today’s demand for high-performance, low-cost power conversion products is driven by consumer expectation for longer battery life, faster charging for their phones, electric vehicles (EVs) or power tools. And consumers want faster data communication along with powerful artificial intelligence (AI) capabilities, de

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Date:

01/15/2019

Cree and STMicroelectronics Silicon Carbide Agreement

DURHAM, N.C. and GENEVA — Cree, Inc. announces that it signed a multi-year agreement to produce and supply its Wolfspeed silicon carbide (SiC) wafers to STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications. The agreement governs the supply of a

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Date:

01/08/2019