Wide-Bandgap Semis

April 2023
onsemi and ZEEKR Sign Long-Term Supply Agreement for Silicon Carbide Power Devices

Hassane El-Khoury, president and CEO, onsemi

­onsemi and ZEEKR announced a long-term supply agreement (LTSA) between the two companies. onsemi will provide its EliteSiC silicon carbide (SiC) power devices to increase the powertrain efficiency of ZEEKR’s smart electric vehicles (EVs), resulting in improved performance, faster charging speeds and ex
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Date:
04/27/2023
Flexible Isolated-Buck IC for Protected Power Conversion and Gate Driving in IGBTs, SiC, and GaN Transistors

Flexible Isolated-Buck IC for Protected Power Conversion and Gate Driving in IGBTs, SiC, and GaN Transistors

­The STMicroelectronics L6983i 10W isolated buck (iso-buck) converter ensures high efficiency and a compact footprint, with advantages including low quiescent current and 3.5V-38V input-voltage range. The L6983i is suitable for applications that require an isolated DC-DC converter. It implements an iso-bu
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Date:
04/24/2023
ZF Signs Multi-Year Supply Agreement with STMicroelectronics for Silicon Carbide Devices

ZF Signs Multi-Year Supply Agreement with STMicroelectronics for Silicon Carbide Devices

­The technology group ZF will, from 2025, purchase silicon carbide devices from STMicroelectronics. Under the terms of the multi-year contract, ST will supply a volume of double-digit millions of silicon carbide devices to be integrated in ZF’s new modular inverter architecture going into series production in
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Date:
04/13/2023
GaN Transistors Bring Newest Rad Hard Technology to Demanding Space Applications

GaN Transistors Bring Newest Rad Hard Technology to Demanding Space Applications

­EPC announces the introduction of two new radiation-hardened GaN FETs. The EPC7020 is a 200 V, 11 mΩ, 170 APulsed, rad-hard GaN FET in a small 12 mm2 footprint. The EPC7003 is a 100 V, 30 mΩ, 42 APulsed, rad-hard GaN FET in a tiny 1.87 mm2 footprint.  Both devices have a total dose radiation ra
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Date:
04/11/2023

 


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