Wide-Bandgap Semis

December 2019
GaN Used in Power Supplies for Large Passenger Airplanes
Transphorm Inc. confirmed that customer AES Aircraft Elektro/Elektronik System GmbH has released its first 650 V GaN-based power supplies. Serving the aviation industry, AES supports customers with various products and services ranging from electrical engineering to certification and testing. The company’s new
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Date:
12/26/2019

GaN Systems and SPARX Advance GaN in Electric Vehicles

The All-GaN Vehicle

GaN Systems announces that SPARX Group "Mirai Creation Fund II (“Mirai fund”)" has made an investment in GaN Systems. Mirai fund provides capital to companies with the goal of accelerating innovation, Vehicle Electrification being one of the major targets, to generate a "new power" that wi
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Date:
12/17/2019
UnitedSiC Announces First SiC FETs with RDS(on) <10mohms
UnitedSiC is introducing four new SiC FETs, with RDS(ON) levels as low as 7mohms, delivering unprecedented levels of performance and efficiency for use in high-power applications such as electric vehicle (EV) inverters, high-powered DC/DC converters, high-current battery chargers and solid-state circuit breakers. Of th
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Date:
12/09/2019
Recharging the Batteries
It has been a mixed year so far, with plenty of innovation on display, but a flat economy put a bit of a spoiler on the industry. The forecast for next year is pretty mixed too, with some people predicting a global recession. As the old saying goes, economists have predicted eight of the last three recessions, so
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Date:
12/04/2019
SiC MOSFET Efficiency and Protection without Compromise

Click image to enlarge

Figure 1. Comparing SiC with conventional Silicon MOSFETs reveals the clearly superior semiconductor characteristics of the SiC material, which allows the construction of significantly smaller switching devices

The lower sheet resistance of wide-bandgap SiC materials (typically 1/100th that of conventional silicon) results in smaller devices for a given current capacity – valuable in space saving applications. In addition, the electric-breakdown- field for SiC (approximately 2.8 MV/cm) allows for a much shorter isolati
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Date:
12/03/2019