Wide-Bandgap Semis

November 2020
A High-Performing Solution is an End-Product of Right Choices - USB-PD Solutions: Part 4 of 4

Figure 1: Simplified schematic of an asymmetric half-bridge flyback

Avoid complexity, incompatibility and shorten time-to-market! Infineon with its broad portfolio of high-performing and high-quality USB-PD solutions help engineers break through the barriers in fast charging designs at a competitive cost. The ever-increasing battery capacity and need for shorter charging time ar
. . . Read More
Date:
11/20/2020

Put Speed into Your Product Development - USB-PD Solutions: Part 3 of 4

Figure 1: Two-chip power adapter solution using PAG1S and PAG1P

Avoid complexity, incompatibility and shorten time-to-market! Infineon with its broad portfolio of high-performing and high-quality USB-PD solutions help engineers break through the barriers in fast charging designs at a competitive cost The need to charge the devices in the shortest amount of time is driving th
. . . Read More
Date:
11/20/2020
Efficiency that Scores - USB-PD Solutions: Part 2 of 4

Figure 1: The 65W USB-PD charger block diagram

Avoid complexity, incompatibility and shorten time-to-market! Infineon with its broad portfolio of high-performing and high-quality USB-PD solutions help engineers break through the barriers in fast charging designs at a competitive cost. The solution introduced in this article is based on a digital zero-voltage
. . . Read More
Date:
11/20/2020
Solved Problems Look Easy  - USB-PD Solutions: Part 1 of 4

Figure 1: Infineon’s product wide array of products for USB-PD designs

Avoid complexity, incompatibility and shorten time-to-market! Infineon with its broad portfolio of high-performing and high-quality USB-PD solutions help engineers break through the barriers in fast charging designs at a competitive cost Nowadays, people have many rechargeable battery-powered mobile devices –
. . . Read More
Date:
11/20/2020
Würth Elektronik’s online platform REDEXPERT expanded
Würth Elektronik has heeded its customers’ suggestions from the practical area and has installed a feature that enables the direct comparison of aluminum-electrolyte and aluminum-polymer capacitors. The calculation of the ripple current has also been improved. The RedExpert online platform has now been modified
. . . Read More
Date:
11/13/2020
SiC MADK board for servo drives
As part of the MADK platform for motors of up to 7.5 kW, the evaluation board EVAL-M5-IMZ120R-SIC is a 3-phase inverter board aiming at servo drive applications. As a true first, Infineon offers details about schematics (PDF), parts (Excel), layout (Gerber), and design package (Altium) as download package on t
. . . Read More
Date:
11/13/2020
TRENCHSTOP IGBT7 technology now available in TO-247 housing
The device comes in a TO-247 with 650 V break down voltage. The new TRENCHSTOP family portfolio consists of current ratings of 20 A, 30 A, 40 A, 50 A, and 75 A. It can easily be used for replacing previous technologies and for paralleling. This version of IGBT7 is especially suited to applications such as indust
. . . Read More
Date:
11/13/2020
Second-generation full-SiC industrial power modules
The low power loss characteristics and high carrier frequency operation of the SiC-MOSFET (metal oxide semiconductor field-effect transistor) and SiC-SBD (schottky barrier diode) chips in the modules are expected to facilitate the development of more efficient, smaller and lighter weight power equipment in various in
. . . Read More
Date:
11/13/2020
RS Components adds SiC MOSFETs from ON Semiconductor
The new N-channel SiC MOSFETs support accelerated switching speeds (with rise times of as little as 10ns). Exhibiting on-resistance figures going down to 20mΩ alongside industry-leading gate charge values, they are subject to minimal power losses. Exceptionally robust, these devices can cope with ultra-high c
. . . Read More
Date:
11/13/2020
100 V eGaN FET Family
The applications for these leading-edge devices include synchronous rectification, class-D audio, infotainment systems, DC-DC converters (hard-switched and resonant), and lidar for autonomous cars, robotics, and drones. The EPC2218 (3.2 mΩ, 231 Apulsed) and the EPC2204 (6 mΩ, 125 Apulsed) have nearly 20% lo
. . . Read More
Date:
11/13/2020
GaN FET with Integrated Driver and Active Power Management
Texas Instruments (TI) expanded its high-voltage power management portfolio with the next generation of 650-V and 600-V gallium nitride (GaN) field-effect transistors (FETs) for automotive and industrial applications. With a fast-switching, 2.2-MHz integrated gate driver, the new families of GaN FETs help engineers de
. . . Read More
Date:
11/09/2020
Forty Years of Know-How

Figure 1: Technology development and product family positioning of Infineon’s 12-300 V power MOSFET offering

Our world has experienced dramatic change over the past 50 years. New economic, social and technological trends have emerged significantly impacting our way of life in different ways.  Regardless of the way and degree to which the world has been changing, one thing remains: technology plays a crucial role in
. . . Read More
Date:
11/01/2020