Wide-Bandgap Semis

November 2020

Figure 1: Simplified schematic of an asymmetric half-bridge flyback

A High-Performing Solution is an End-Product of Right Choices - USB-PD Solutions: Part 4 of 4

Tim Hu, Director – Global Low-power SMPS Application, Infineon Technologies

Avoid complexity, incompatibility and shorten time-to-market! Infineon with its broad portfolio of high-performing and high-quality USB-PD solutions help engineers break through the barriers in fast charging designs at a competitive cost. The ever-increasing battery capacity and need for shorter charging time ar

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Date:

11/20/2020

Figure 1: Two-chip power adapter solution using PAG1S and PAG1P

Put Speed into Your Product Development - USB-PD Solutions: Part 3 of 4

Gautam Chinagundi, Staff Specialist Product Marketing, and Rashed Ahmed of Infineon Technologies

Avoid complexity, incompatibility and shorten time-to-market! Infineon with its broad portfolio of high-performing and high-quality USB-PD solutions help engineers break through the barriers in fast charging designs at a competitive cost The need to charge the devices in the shortest amount of time is driving th

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Date:

11/20/2020

Figure 1: The 65W USB-PD charger block diagram

Efficiency that Scores - USB-PD Solutions: Part 2 of 4

Tim Hu, Director – Global Low-power SMPS Application, Infineon Technologies

Avoid complexity, incompatibility and shorten time-to-market! Infineon with its broad portfolio of high-performing and high-quality USB-PD solutions help engineers break through the barriers in fast charging designs at a competitive cost. The solution introduced in this article is based on a digital zero-voltage

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Date:

11/20/2020

Figure 1: Infineon’s product wide array of products for USB-PD designs

Solved Problems Look Easy - USB-PD Solutions: Part 1 of 4

Tim Hu, Global Low-power SMPS Application, Infineon Technologies

Avoid complexity, incompatibility and shorten time-to-market! Infineon with its broad portfolio of high-performing and high-quality USB-PD solutions help engineers break through the barriers in fast charging designs at a competitive cost Nowadays, people have many rechargeable battery-powered mobile devices –

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Date:

11/20/2020

Würth Elektronik’s online platform REDEXPERT expanded

Würth Elektronik has heeded its customers’ suggestions from the practical area and has installed a feature that enables the direct comparison of aluminum-electrolyte and aluminum-polymer capacitors. The calculation of the ripple current has also been improved. The RedExpert online platform has now been modified

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Date:

11/13/2020

SiC MADK board for servo drives

As part of the MADK platform for motors of up to 7.5 kW, the evaluation board EVAL-M5-IMZ120R-SIC is a 3-phase inverter board aiming at servo drive applications. As a true first, Infineon offers details about schematics (PDF), parts (Excel), layout (Gerber), and design package (Altium) as download package on t

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Date:

11/13/2020

TRENCHSTOP IGBT7 technology now available in TO-247 housing

The device comes in a TO-247 with 650 V break down voltage. The new TRENCHSTOP family portfolio consists of current ratings of 20 A, 30 A, 40 A, 50 A, and 75 A. It can easily be used for replacing previous technologies and for paralleling. This version of IGBT7 is especially suited to applications such as indust

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Date:

11/13/2020

Second-generation full-SiC industrial power modules

The low power loss characteristics and high carrier frequency operation of the SiC-MOSFET (metal oxide semiconductor field-effect transistor) and SiC-SBD (schottky barrier diode) chips in the modules are expected to facilitate the development of more efficient, smaller and lighter weight power equipment in various in

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Date:

11/13/2020

RS Components adds SiC MOSFETs from ON Semiconductor

The new N-channel SiC MOSFETs support accelerated switching speeds (with rise times of as little as 10ns). Exhibiting on-resistance figures going down to 20mΩ alongside industry-leading gate charge values, they are subject to minimal power losses. Exceptionally robust, these devices can cope with ultra-high c

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Date:

11/13/2020

100 V eGaN FET Family

The applications for these leading-edge devices include synchronous rectification, class-D audio, infotainment systems, DC-DC converters (hard-switched and resonant), and lidar for autonomous cars, robotics, and drones. The EPC2218 (3.2 mΩ, 231 Apulsed) and the EPC2204 (6 mΩ, 125 Apulsed) have nearly 20% lo

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Date:

11/13/2020

GaN FET with Integrated Driver and Active Power Management

Texas Instruments (TI) expanded its high-voltage power management portfolio with the next generation of 650-V and 600-V gallium nitride (GaN) field-effect transistors (FETs) for automotive and industrial applications. With a fast-switching, 2.2-MHz integrated gate driver, the new families of GaN FETs help engineers de

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Date:

11/09/2020

Figure 1: Technology development and product family positioning of Infineon’s 12-300 V power MOSFET offering

Forty Years of Know-How

By: Ashita Mirchandani, Lead Principal – Device Design and Technology Development, and Bastian Lang, Product Marketing Manager at Infineon Technologies

Our world has experienced dramatic change over the past 50 years. New economic, social and technological trends have emerged significantly impacting our way of life in different ways. Regardless of the way and degree to which the world has been changing, one thing remains: technology plays a crucial role in

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Date:

11/01/2020