Wide-Bandgap Semis

    November 2020
    A High-Performing Solution is an End-Product of Right Choices - USB-PD Solutions: Part 4 of 4

    Figure 1: Simplified schematic of an asymmetric half-bridge flyback

    Avoid complexity, incompatibility and shorten time-to-market! Infineon with its broad portfolio of high-performing and high-quality USB-PD solutions help engineers break through the barriers in fast charging designs at a competitive cost. The ever-increasing battery capacity and need for shorter charging time ar
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    Date:
    11/20/2020
    Put Speed into Your Product Development - USB-PD Solutions: Part 3 of 4

    Figure 1: Two-chip power adapter solution using PAG1S and PAG1P

    Avoid complexity, incompatibility and shorten time-to-market! Infineon with its broad portfolio of high-performing and high-quality USB-PD solutions help engineers break through the barriers in fast charging designs at a competitive cost The need to charge the devices in the shortest amount of time is driving th
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    Date:
    11/20/2020
    Efficiency that Scores - USB-PD Solutions: Part 2 of 4

    Figure 1: The 65W USB-PD charger block diagram

    Avoid complexity, incompatibility and shorten time-to-market! Infineon with its broad portfolio of high-performing and high-quality USB-PD solutions help engineers break through the barriers in fast charging designs at a competitive cost. The solution introduced in this article is based on a digital zero-voltage
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    Date:
    11/20/2020
    Solved Problems Look Easy  - USB-PD Solutions: Part 1 of 4

    Figure 1: Infineon’s product wide array of products for USB-PD designs

    Avoid complexity, incompatibility and shorten time-to-market! Infineon with its broad portfolio of high-performing and high-quality USB-PD solutions help engineers break through the barriers in fast charging designs at a competitive cost Nowadays, people have many rechargeable battery-powered mobile devices –
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    Date:
    11/20/2020
    Würth Elektronik’s online platform REDEXPERT expanded
    Würth Elektronik has heeded its customers’ suggestions from the practical area and has installed a feature that enables the direct comparison of aluminum-electrolyte and aluminum-polymer capacitors. The calculation of the ripple current has also been improved. The RedExpert online platform has now been modified
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    Date:
    11/13/2020
    SiC MADK board for servo drives
    As part of the MADK platform for motors of up to 7.5 kW, the evaluation board EVAL-M5-IMZ120R-SIC is a 3-phase inverter board aiming at servo drive applications. As a true first, Infineon offers details about schematics (PDF), parts (Excel), layout (Gerber), and design package (Altium) as download package on t
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    Date:
    11/13/2020
    TRENCHSTOP IGBT7 technology now available in TO-247 housing
    The device comes in a TO-247 with 650 V break down voltage. The new TRENCHSTOP family portfolio consists of current ratings of 20 A, 30 A, 40 A, 50 A, and 75 A. It can easily be used for replacing previous technologies and for paralleling. This version of IGBT7 is especially suited to applications such as indust
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    Date:
    11/13/2020
    Second-generation full-SiC industrial power modules
    The low power loss characteristics and high carrier frequency operation of the SiC-MOSFET (metal oxide semiconductor field-effect transistor) and SiC-SBD (schottky barrier diode) chips in the modules are expected to facilitate the development of more efficient, smaller and lighter weight power equipment in various in
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    Date:
    11/13/2020
    RS Components adds SiC MOSFETs from ON Semiconductor
    The new N-channel SiC MOSFETs support accelerated switching speeds (with rise times of as little as 10ns). Exhibiting on-resistance figures going down to 20mΩ alongside industry-leading gate charge values, they are subject to minimal power losses. Exceptionally robust, these devices can cope with ultra-high c
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    Date:
    11/13/2020
    100 V eGaN FET Family
    The applications for these leading-edge devices include synchronous rectification, class-D audio, infotainment systems, DC-DC converters (hard-switched and resonant), and lidar for autonomous cars, robotics, and drones. The EPC2218 (3.2 mΩ, 231 Apulsed) and the EPC2204 (6 mΩ, 125 Apulsed) have nearly 20% lo
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    Date:
    11/13/2020
    GaN FET with Integrated Driver and Active Power Management
    Texas Instruments (TI) expanded its high-voltage power management portfolio with the next generation of 650-V and 600-V gallium nitride (GaN) field-effect transistors (FETs) for automotive and industrial applications. With a fast-switching, 2.2-MHz integrated gate driver, the new families of GaN FETs help engineers de
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    Date:
    11/09/2020
    Forty Years of Know-How

    Figure 1: Technology development and product family positioning of Infineon’s 12-300 V power MOSFET offering

    Our world has experienced dramatic change over the past 50 years. New economic, social and technological trends have emerged significantly impacting our way of life in different ways.  Regardless of the way and degree to which the world has been changing, one thing remains: technology plays a crucial role in
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    Date:
    11/01/2020
    Archive

    Bosch introduces third generation of SiC chips

    Apr 22,2026
    Ally Winning, European Editor, PSD

    Transformer Design Comparisons for Mitigating EMI in Gate Driver Circuits

    Mar 29,2026
    Matthew Russell, Master’s student at University College Cork, and a student engineer at Bourns Electronics Ireland

    Wide Bandgap Devices Deliver on Their Promise

    Jan 26,2026
    Kevin Parmenter, Pins Out Engineering, for TSC America, Inc.

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