Wide-Bandgap Semis

May 2023

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Figure 1: The Qorvo SiC FET – a ‘cascode’ of a Si-MOSFET and SiC JFET

Combining Lowest RDS(on) + SMT for Space-Limited, High-Performance Apps

Pete Losee, Director of Technology Development, Qorvo

The performance of wide band-gap (WBG) semiconductor switches such as silicon carbide cascode FETs (‘SiC FET’ henceforth) (Figure 1) and SiC MOSFETs is closely tied to its package. At the pure technology level, nanosecond switching speed and low specific on-resistance result in very low losses, allowing mu

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Date:

05/30/2023

Navitas' Next-gen SiC Power Semis Adopted in Industrial Chargers from Exide Technologies

Navitas Semiconductor announced that Exide Technologies’ next-generation, high-frequency fast chargers for industrial material handling equipment have adopted new, leading-edge GeneSiC power semiconductors to ensure reliability, safety, ease-of-use and optimal charging. Exide Technologies is a lead

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Date:

05/18/2023

Lora Weiss, Penn State senior vice president of research

Penn State and onsemi Sign MOU to Boost Silicon Carbide Research in the United States

onsemi and Penn State are pleased to announce the signing of a memorandum of understanding (MOU) towards an $8 million strategic collaboration which includes the establishment of the onsemi Silicon Carbide Crystal Center (SiC3) at Penn State’s Materials Research Institute (MRI). onsemi will fund SiC3 wi

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Date:

05/18/2023

On Semiconductor’s VP of Power Solutions, Simon Keeton

PSDcast – The Importance of SiC in EVs

We’ve covered wide bandgap semiconductors rather extensively and all their advantages and efficiencies over legacy technologies. This is even more critical when we’re discussing electric vehicles – the future of transportation – and especially with regards to silicon carbide.

Date:

05/17/2023

1200 V EliteSiC M3S Devices Enhance Efficiency of Electric Vehicles and Energy Infrastructure Applications

onsemi announced the release of the latest generation of 1200 V EliteSiC silicon carbide (SiC) M3S devices, which enable power electronics designers to achieve best-in-class efficiency and lower system cost. The new portfolio includes EliteSiC MOSFETs and modules that facilitate higher switching speeds to su

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Date:

05/10/2023

Silicon Carbide E-Fuse Demonstrator Provides a Faster, More Reliable Method for Protecting Power Electronics in Electric Vehicle Applications

High-voltage electrical subsystems throughout Battery Electric Vehicles (BEVs) and Hybrid Electric Vehicles (HEVs) require a mechanism to protect the high-voltage distribution and loads in the event of an overload condition. To provide BEV and HEV designers with a faster and more reliable high-voltage circuit pr

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Date:

05/09/2023

ROHM Begins Mass Production of 650V GaN HEMTs that Deliver Class-Leading Performance

ROHM Semiconductor announced mass production of 650V GaN (Gallium Nitride) HEMTs GNP1070TC-Z and GNP1150TCA-Z optimized for a wide range of power supply systems applications. These new products are jointly developed with Ancora Semiconductors, Inc., an affiliate of Delta Electronics, In

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Date:

05/08/2023

Highest Power Density for Regulated DC-DC Converters Achieved Using EPC GaN FETs and Analog Devices Controller

EPC announces the availability of the EPC9158, a dual output synchronous buck converter reference design board operating at 500 kHz switching frequency that converts an input voltage of 48 V - 54 V to a regulated 12 V output and delivers up to 25 A per phase or 50 A total continuous current. The combination of

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Date:

05/02/2023

Jason Lomberg, North American Editor, PSD

Back in the APEC Saddle

Jason Lomberg, North American Editor, PSD

Another APEC’s in the books, and while by all accounts, this year’s gala in Orlando was business-as-usual, it held special significance for me. I’m no greenhorn — to the industry, PSD, or APEC —but this was the first Applied Power and Electronics Conference I’ve attended since COVID-19 upended t

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Date:

05/01/2023

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Figure 1: EPC Motor Drive Reference Design Power boards

Growing GaN Ecosystem for BLDC Motor Drives

Marco Palma, Motor Drives Systems and Applications Director at Efficient Power Conversion

So far, silicon-based power devices have been dominant in inverter electronics, but today their performance is nearing its theoretical limits. There is an increasing need for higher power density. Gallium nitride (GaN) transistors and ICs have the best attributes to satisfy BLDC inverter needs. The super

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Date:

05/01/2023