Wide-Bandgap Semis
May 2023
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Figure 1: The Qorvo SiC FET – a ‘cascode’ of a Si-MOSFET and SiC JFET
The performance of wide band-gap (WBG) semiconductor switches such as silicon carbide cascode FETs (‘SiC FET’ henceforth) (Figure 1) and SiC MOSFETs is closely tied to its package. At the pure technology level, nanosecond switching speed and low specific on-resistance result in very low losses, allowing mu
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Date:
05/30/2023
Navitas' Next-gen SiC Power Semis Adopted in Industrial Chargers from Exide Technologies
Navitas Semiconductor announced that Exide Technologies’ next-generation, high-frequency fast chargers for industrial material handling equipment have adopted new, leading-edge GeneSiC power semiconductors to ensure reliability, safety, ease-of-use and optimal charging.
Exide Technologies is a lead
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Date:
05/18/2023
Lora Weiss, Penn State senior vice president of research
onsemi and Penn State are pleased to announce the signing of a memorandum of understanding (MOU) towards an $8 million strategic collaboration which includes the establishment of the onsemi Silicon Carbide Crystal Center (SiC3) at Penn State’s Materials Research Institute (MRI). onsemi will fund SiC3 wi
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Date:
05/18/2023
On Semiconductor’s VP of Power Solutions, Simon Keeton
We’ve covered wide bandgap semiconductors rather extensively and all their advantages and efficiencies over legacy technologies. This is even more critical when we’re discussing electric vehicles – the future of transportation – and especially with regards to silicon carbide.
Date:
05/17/2023
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1200 V EliteSiC M3S Devices Enhance Efficiency of Electric Vehicles and Energy Infrastructure Applications
onsemi announced the release of the latest generation of 1200 V EliteSiC silicon carbide (SiC) M3S devices, which enable power electronics designers to achieve best-in-class efficiency and lower system cost. The new portfolio includes EliteSiC MOSFETs and modules that facilitate higher switching speeds to su
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Date:
05/10/2023
Silicon Carbide E-Fuse Demonstrator Provides a Faster, More Reliable Method for Protecting Power Electronics in Electric Vehicle Applications
High-voltage electrical subsystems throughout Battery Electric Vehicles (BEVs) and Hybrid Electric Vehicles (HEVs) require a mechanism to protect the high-voltage distribution and loads in the event of an overload condition. To provide BEV and HEV designers with a faster and more reliable high-voltage circuit pr
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Date:
05/09/2023
ROHM Begins Mass Production of 650V GaN HEMTs that Deliver Class-Leading Performance
ROHM Semiconductor announced mass production of 650V GaN (Gallium Nitride) HEMTs GNP1070TC-Z and GNP1150TCA-Z optimized for a wide range of power supply systems applications. These new products are jointly developed with Ancora Semiconductors, Inc., an affiliate of Delta Electronics, In
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Date:
05/08/2023
Highest Power Density for Regulated DC-DC Converters Achieved Using EPC GaN FETs and Analog Devices Controller
EPC announces the availability of the EPC9158, a dual output synchronous buck converter reference design board operating at 500 kHz switching frequency that converts an input voltage of 48 V - 54 V to a regulated 12 V output and delivers up to 25 A per phase or 50 A total continuous current. The combination of
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Date:
05/02/2023
Jason Lomberg, North American Editor, PSD
Another APEC’s in the books, and while by all accounts, this year’s gala in Orlando was business-as-usual, it held special significance for me.
I’m no greenhorn — to the industry, PSD, or APEC —but this was the first Applied Power and Electronics Conference I’ve attended since COVID-19 upended t
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Date:
05/01/2023
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Figure 1: EPC Motor Drive Reference Design Power boards
So far, silicon-based power devices have been dominant in inverter electronics, but today their performance is nearing its theoretical limits. There is an increasing need for higher power density.
Gallium nitride (GaN) transistors and ICs have the best attributes to satisfy BLDC inverter needs. The super
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Date:
05/01/2023
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