Wide-Bandgap Semis

August 2022

Third-Generation 1200V SiC MOSFETs Boost Industrial Power-Conversion Efficiency

Toshiba Electronics Europe GmbH (“Toshiba”) has launched five 1200V silicon-carbide (SiC) MOSFETs that leverage the Company’s third generation SiC technology to boost the energy efficiency of high-voltage industrial applications. They are used in equipment such as EV charging stations, photovoltaic inverters, in

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Date:

08/31/2022

BRC Solar Selects EPC 100 V eGaN FETs for Next Generation Solar Optimizer

BRC Solar GmbH has revolutionized the photovoltaic market with its power optimizer, increasing energy yield and performance of pv plants and systems. Designing-in Efficient Power Conversion’s EPC2218 100 V FETs into its next generation M500/14 power optimizer has enableda higher current density due

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Date:

08/23/2022

Gene Sheridan, Navitas CEO and co-founder

Navitas Semiconductor Announces Acquisition of GeneSiC Semiconductor

Navitas Semiconductor announced the acquisition of GeneSiC Semiconductor, a silicon carbide (SiC) pioneer with deep expertise in SiC power device design and process. The transaction is immediately accretive to Navitas as GeneSiC is highly profitable, with more than 25% EBITDA margins. Calendar 2022 revenues ar

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Date:

08/17/2022

160W Ultra-fast Charger Powers OnePlus Flagship 10T Smartphone

Navitas Semiconductor announced that OnePlus has once again chosen GaNFast next-gen power ICs to ultra-fast-charge its new flagship smartphone, the OnePlus 10T. The new OnePlus 10T features the latest Qualcomm Snapdragon® 8+ Gen 1 (4 nm) chipset, a 120 Hz FHD + AMOLED display screen, and 50 MP main c

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Date:

08/15/2022

35 A GaN ePower Stage IC Boosts Power Density and Simplifies Design

EPC announces the introduction of a 100 V, 35 A integrated circuit designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones. The EPC23102 eGaN IC is capable of a maximum withstand voltage o

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Date:

08/10/2022

Navitas GaN ICs Save First 100,000 Tons of CO2 Emissions

Navitas Semiconductor has announced the first saving of 100,000 tons of CO2 emissions as GaN replaces legacy silicon chips to “Electrify Our World”. GaN uses up to 10x-lower CO2 footprint to manufacture and ship compared to silicon, while reducing the end-application CO2 footprint up to 30%. Each

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Date:

08/05/2022