Wide-Bandgap Semis
October 2018
48 V Power Distribution
Building the Smallest and Most Efficient 48 V to 5 - 12 V DC to DC using eGaN® FETs and ICs
In the first article in this series, how gallium nitride(GaN)-on-silicon low voltage power devices have enabled many new applications, such as light detection and ranging(LiDAR), envelope tracking, and wir
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Date:
10/31/2018
Following on from the recently introduced 750W PKJ4000 series, the PKB-D is a high-density converter in the industry standard eighth-brick format with an output of 50V at 5A, and an input voltage range of 36 to 60V. This makes it ideal for 50V GaN based RFPA’s and also high voltage LDMOS applications.
Th
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Date:
10/31/2018
Capable of withstanding a 10G vibrational force for a period of 6 hours, the components in Harwin’s new M225 connector series are intended for industrial deployment.
These compact, high performance cable-to-board units feature a robust construction for prolonged operational lifespan, thanks to their glass-reinfor
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Date:
10/31/2018
DALLAS – Texas Instruments (TI) announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support applications up to 10 kW. The LMG341x family enables designers to create smaller, more efficient and higher-performing designs compared to silicon field-effect transistors (F
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Date:
10/30/2018
HARTING has been selected as the first producer to support a common interface between the CAx data providers CADENAS and Zuken E³.series. Fast and reliable access to component libraries is essential for smooth production processes and meeting time-to-market targets.
Zuken and CADENAS have announced a partnership to st
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Date:
10/30/2018
Alex Lidow from Efficient Power Conversion
In this episode of the PSDcast, we're talking to Alex Lidow from Efficient Power Conversion about gallium nitride's (GaN) application in connected automobiles ...
Date:
10/23/2018
Figure 1. Gate drive voltage comparisons, recommended and absolute maximum
In the days when bipolar transistors were the only option for semiconductor power switches, their base drive circuit was critical for fast and efficient operation. With power device gains often just in double digits, base currents could be huge. Complex arrangements had to be used to drive current in and out at
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Date:
10/02/2018
As usual, autumn means conference season. And this year conference season will be dominated by electronica as it is every second year. All of the famed German organisational stereotypes will be tested to their limits, with the conference expanding to 16 halls. For me personally, that means even more walking be
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Date:
10/02/2018
Green SiC substrate at the bottom with the graphene layer on top irradiated by protons, generating a luminescent defect in the SiC crystal.
WASHINGTON, D.C. -- Silicon carbide (SiC), a material known for its toughness with applications from abrasives to car brakes, to high-temperature power electronics, has enjoyed renewed interest for its potential in quantum technology. Its ability to house optically excitable defects, called color centers, has ma
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Date:
10/01/2018
