Wide-Bandgap Semis

    April 2022
    ROHM and Delta Electronics Form a Strategic Partnership to Develop GaN Power Devices

    Kazuhide Ino, Managing Executive Officer, CSO, ROHM

    ­Global semiconductor supplier ROHM Semiconductor and world-class power supply manufacturer Delta Electronics announced that they have entered into a strategic partnership to develop and mass-produce next-generation GaN (gallium nitride) power devices. Combining Delta’s power supply device de
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    Date:
    04/28/2022
    New Technology Enables 1200 V SiC MOSFET in Various Packages
    The new M1H chip has been designed to provide flexibility and is intended for use in applications, such as inverters in solar energy systems, which have to meet peak demand. The chip is also ideal for use in fast EV charging, energy storage systems and other industrial applications.   Advancements in the
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    Date:
    04/19/2022
    40 V Rad Hard GaN Power Device for Demanding Space Applications
    ­EPC Space announces the introduction of EPC7019G, a 40 V, 4 mΩ, 530 Apulsed, radiation-hardened gallium nitride transistor that is lower in cost and is a more efficient solution than the nearest comparable radiation hardened (RH) silicon MOSFET. The EPC7019G has a total dose rating greater than 1 Mrad
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    Date:
    04/18/2022
    SemiQ Launches 1200V 80mΩ Silicon Carbide MOSFET Modules
    SemiQ, Inc. is proud to announce the release of its second-generation Silicon Carbide 1200V 80mΩ Power MOSFET modules developed in the industry-standard SOT-227 packages. These 1200V Silicon Carbide MOSFET Modules are the latest extension to their SiC MOSFET product portfoli
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    Date:
    04/04/2022
    Weighing Automotive WBG Power Options

    Click image to enlarge

    Figure 1: A MHEV 48V system with three paralleled MOSFETs in a symmetrical loop on the PCB face (Source: Author)

    Automobile power electronic designs continue to diverge in electric vehicles (EV), hybrid, and gasoline autos where silicon power metal-oxide-semiconductor field-effect transistors (MOSFETs) and wide-bandgap (WBG) semiconductor devices, such as gallium nitride (GaN) and silicon carbide (SiC) devices, create ef
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    Date:
    04/01/2022
    GaN Reliability: Beyond Performance and Efficiency

    Click image to enlarge

    Figure 1: Integrated GaNFast Power IC

    Designers are seeking alternatives to silicon to meet the performance and efficiency challenges of their next generation technologies. In addition, OEMs are looking for ways to reduce their carbon footprint by reducing materials and energy use related to their products. Gallium nitride (GaN) is rapidly becoming th
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    Date:
    04/01/2022
    Archive

    Transformer Design Comparisons for Mitigating EMI in Gate Driver Circuits

    Mar 29,2026
    Matthew Russell, Master’s student at University College Cork, and a student engineer at Bourns Electronics Ireland

    Wide Bandgap Devices Deliver on Their Promise

    Jan 26,2026
    Kevin Parmenter, Pins Out Engineering, for TSC America, Inc.

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