Wide-Bandgap Semis

April 2022

Kazuhide Ino, Managing Executive Officer, CSO, ROHM

ROHM and Delta Electronics Form a Strategic Partnership to Develop GaN Power Devices

Global semiconductor supplier ROHM Semiconductor and world-class power supply manufacturer Delta Electronics announced that they have entered into a strategic partnership to develop and mass-produce next-generation GaN (gallium nitride) power devices. Combining Delta’s power supply device de

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Date:

04/28/2022

New Technology Enables 1200 V SiC MOSFET in Various Packages

Ally Winning

The new M1H chip has been designed to provide flexibility and is intended for use in applications, such as inverters in solar energy systems, which have to meet peak demand. The chip is also ideal for use in fast EV charging, energy storage systems and other industrial applications. Advancements in the

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Date:

04/19/2022

40 V Rad Hard GaN Power Device for Demanding Space Applications

EPC Space announces the introduction of EPC7019G, a 40 V, 4 mΩ, 530 Apulsed, radiation-hardened gallium nitride transistor that is lower in cost and is a more efficient solution than the nearest comparable radiation hardened (RH) silicon MOSFET. The EPC7019G has a total dose rating greater than 1 Mrad

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Date:

04/18/2022

SemiQ Launches 1200V 80mΩ Silicon Carbide MOSFET Modules

SemiQ, Inc. is proud to announce the release of its second-generation Silicon Carbide 1200V 80mΩ Power MOSFET modules developed in the industry-standard SOT-227 packages. These 1200V Silicon Carbide MOSFET Modules are the latest extension to their SiC MOSFET product portfoli

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Date:

04/04/2022

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Figure 1: A MHEV 48V system with three paralleled MOSFETs in a symmetrical loop on the PCB face (Source: Author)

Weighing Automotive WBG Power Options

Bonnie Baker for Mouser Electronics

Automobile power electronic designs continue to diverge in electric vehicles (EV), hybrid, and gasoline autos where silicon power metal-oxide-semiconductor field-effect transistors (MOSFETs) and wide-bandgap (WBG) semiconductor devices, such as gallium nitride (GaN) and silicon carbide (SiC) devices, create ef

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Date:

04/01/2022

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Figure 1: Integrated GaNFast Power IC

GaN Reliability: Beyond Performance and Efficiency

Anthony Schiro, VP Quality, Navitas Semiconductor

Designers are seeking alternatives to silicon to meet the performance and efficiency challenges of their next generation technologies. In addition, OEMs are looking for ways to reduce their carbon footprint by reducing materials and energy use related to their products. Gallium nitride (GaN) is rapidly becoming th

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Date:

04/01/2022