Wide-Bandgap Semis
July 2022
UnitedSiC (now Qorvo) Extends Highest-performance, Most Efficient 750V SiC FET Portfolio for Power Designs
Qorvo announced seven 750V silicon carbide (SiC) FETs in the surface mount D2PAK-7L package. With this package option, Qorvo’s SiC FETs are tailored for the rapidly growing applications of onboard chargers, soft-switched DC/DC converters, battery charging (fast DC and industrial) and IT/server powe
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Date:
07/26/2022
Dr. Shahin Sharifzadeh has over 30 years of semiconductor experience and was most recently the SVP of World-wide Operations at Atmel. Before Atmel, Shahin was the EVP of Technology and World-wide Manufacturing at Cypress.
GaN has already transformed the power electronics industry, but there may be much more to come. The technology has matured somewhat, and each new generation of GaN devices brings incremental benefits - switching gets faster, efficiency rises and power products get smaller. Those gains will continue into the fu
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Date:
07/26/2022
Application board showcasing the new ICeGaN technology
The benefits of GaN technology are clear to see. Higher frequency switching means higher efficiency, as well as allowing supporting components to be smaller, giving a more compact design overall. The inherent heat handling properties of GaN devices, coupled with their higher efficiency leads to less heat di
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Date:
07/20/2022
100 V and 200 V Rad-Hard GaN Power Devices Increase Power Density for Demanding Space Applications
EPC Space announces the introduction of two new rad-hard GaN transistors with ultra-low on-resistance and extremely low gate charge for high power density solutions that are lower cost and more efficient than the nearest comparable radiation-hardened silicon MOSFET. These devices come packaged in hermetic pa
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Date:
07/19/2022
Martin Wattenberg, Staff System Application Engineer for GaN-based systems, Infineon Technologies
Infineon recently authored a 3-part article series for us on service robotics, and we’d like to delve a little deeper with the author of the first piece, Martin Wattenberg, Staff System Application Engineer for GaN-based systems, Infineon Technologies.
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Date:
07/11/2022
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