Wide-Bandgap Semis

April 2018

Peter Di Maso, Director, Product Line Management at GaN Systems

The pursuit of higher efficiency has been a driving factor in industry progress since electricity was first harnessed. The introduction of solid state transistors in switching applications enabled the switching power converter and created a step function improvement in power conversion efficiency. Advances in

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Date:

04/25/2018

Figure 1. SiC cascode configuration

SiC Cascodes: Fast-Track to Wide-Bandgap Performance and Efficiency

Anup Bhalla, VP Engineering at UnitedSiC

SiC MOSFETs can deliver impressive performance and efficiency gains in power-conversion circuits, but a clean-sheet design is needed for best results. SiC cascodes offer a drop-in replacement bringing instant access to many of the advantages of wide-bandgap devices. Drop In, Turn On Silicon carbide diodes, and MOSFETs in 60

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Date:

04/24/2018

The Ideal Package Design for Silicon Carbide and Wide-Bandgap Devices

Paul Koep, Alpha Assembly Solutions

The introduction of improved semiconductor devices, namely wide bandgap types such as Silicon Carbide(SiC) and Gallium Nitride (GaN) will enable significantly higher performance power switching applications, especially in applications such as automotive traction inverters. SiC power semiconductor technolog

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Date:

04/24/2018

Ally Winning, European Editor, PSD

It’s all about materials

Ally Winning, European Editor, PSD

Welcome to the May edition of PSD. This year seems to be constantly busy and the time is flying in. Maybe it is because the industry is on the crest of a wave at the moment, or it may be that the number of important events is increasing and we are constantly in the lead up to another one. This month, we start to

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Date:

04/24/2018

Figure 1: Comparison of the normalized area of a chip versus the voltage rating of the best MOSFETs, in blue, with the latest generation of GaN FET (Source Efficient Power Conversion (EPC))

Powering the Future with Intelligence and Efficiency

Patrick Le Fèvre, Powerbox

In March 2018, the Applied Power Electronics Conference (APEC) took place in San Antonio (Texas). APEC is the world’s largest convention dedicated to applied power electronics, and the place where research laboratories, universities, market analysts and companies showcase the latest and often ‘industry first’ te

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Date:

04/23/2018

Figure 1: 3D model depicting Dual Cool technology

Advanced Cooling and Efficient Semiconductor Technology is a Winning Combination

Dongsup Eom, Applications Engineer, and Dennis Kim, Applications Engineer, ON Semiconductor

Power engineers often face seemingly conflicting and almost impossible challenges. As system designers add more features and functionality to newer product generations, so the system requires more power, but has less space available to generate it. While there are many techniques available to manage heat, forced ai

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Date:

04/23/2018

2018 Will be a SiC Year

Jason Lomberg, North American Editor, PSD

We’ve been playing soothsayer a lot lately, but if you strolled the halls of the Henry B. González Convention Center at APEC 2018, one theme was absolutely inescapable – the ubiquity of silicon carbide (SiC). 2018 should be its coming-out party. Nearly every company we visited chatted up the magnitude

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Date:

04/10/2018

Imec and Qromis Present High Performance p-GaN HEMTs on 200mm CTE-matched Substrates

imec and Qromis, have announced the development of high performance enhancement mode p-GaN power devices on 200mm engineered Coefficient of Thermal Expansion (CTE)-matched substrates, processed in imec’s silicon pilot line. The substrates are offered by Qromis as commercial 200mm QST® substrates as part of

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Date:

04/09/2018