Wide-Bandgap Semis
April 2018
The pursuit of higher efficiency has been a driving factor in industry progress since electricity was first harnessed. The introduction of solid state transistors in switching applications enabled the switching power converter and created a step function improvement in power conversion efficiency. Advances in
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Date:
04/25/2018
Figure 1. SiC cascode configuration
SiC MOSFETs can deliver impressive performance and efficiency gains in power-conversion circuits, but a clean-sheet design is needed for best results. SiC cascodes offer a drop-in replacement bringing instant access to many of the advantages of wide-bandgap devices.
Drop In, Turn On
Silicon carbide diodes, and MOSFETs in 60
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Date:
04/24/2018
The introduction of improved semiconductor devices, namely wide bandgap types such as Silicon Carbide(SiC) and Gallium Nitride (GaN) will enable significantly higher performance power switching applications, especially in applications such as automotive traction inverters.
SiC power semiconductor technolog
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Date:
04/24/2018
Ally Winning, European Editor, PSD
Welcome to the May edition of PSD. This year seems to be constantly busy and the time is flying in. Maybe it is because the industry is on the crest of a wave at the moment, or it may be that the number of important events is increasing and we are constantly in the lead up to another one. This month, we start to
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Date:
04/24/2018
Figure 1: Comparison of the normalized area of a chip versus the voltage rating of the best MOSFETs, in blue, with the latest generation of GaN FET (Source Efficient Power Conversion (EPC))
In March 2018, the Applied Power Electronics Conference (APEC) took place in San Antonio (Texas). APEC is the world’s largest convention dedicated to applied power electronics, and the place where research laboratories, universities, market analysts and companies showcase the latest and often ‘industry first’ te
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Date:
04/23/2018
Figure 1: 3D model depicting Dual Cool technology
Power engineers often face seemingly conflicting and almost impossible challenges. As system designers add more features and functionality to newer product generations, so the system requires more power, but has less space available to generate it. While there are many techniques available to manage heat, forced ai
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Date:
04/23/2018
We’ve been playing soothsayer a lot lately, but if you strolled the halls of the Henry B. González Convention Center at APEC 2018, one theme was absolutely inescapable – the ubiquity of silicon carbide (SiC). 2018 should be its coming-out party.
Nearly every company we visited chatted up the magnitude
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Date:
04/10/2018
imec and Qromis, have announced the development of high performance enhancement mode p-GaN power devices on 200mm engineered Coefficient of Thermal Expansion (CTE)-matched substrates, processed in imec’s silicon pilot line. The substrates are offered by Qromis as commercial 200mm QST® substrates as part of
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Date:
04/09/2018
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