Wide-Bandgap Semis

February 2021
ON Semiconductor Announce New 650V Silicon Carbide MOSFETs
ON Semiconductor has announced a new range of silicon carbide (SiC) MOSFET devices for demanding applications where power density, efficiency and reliability are key considerations. By replacing existing silicon switching technologies with the new SiC devices, designers will achieve significantly better performance in
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Date:
02/17/2021

High-Voltage Probe for SiC, GaN Power Conversion Testing
The HVD3220 high voltage differential probe from Teledyne LeCroy is ideal for wide-bandgap (SiC and GaN) power conversion testing at DC bus voltages from 500 to 1500 V. The HVD3220 is an addition to their HVD product series. It has 400 MHz bandwidth and a 1500 Vdc CAT III and 2000 V (DC+peakAC) CAT I rating.
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Date:
02/15/2021