Wide-Bandgap Semis

    February 2021
    ON Semiconductor Announce New 650V Silicon Carbide MOSFETs
    ON Semiconductor has announced a new range of silicon carbide (SiC) MOSFET devices for demanding applications where power density, efficiency and reliability are key considerations. By replacing existing silicon switching technologies with the new SiC devices, designers will achieve significantly better performance in
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    Date:
    02/17/2021
    High-Voltage Probe for SiC, GaN Power Conversion Testing
    The HVD3220 high voltage differential probe from Teledyne LeCroy is ideal for wide-bandgap (SiC and GaN) power conversion testing at DC bus voltages from 500 to 1500 V. The HVD3220 is an addition to their HVD product series. It has 400 MHz bandwidth and a 1500 Vdc CAT III and 2000 V (DC+peakAC) CAT I rating.
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    Date:
    02/15/2021
    Archive

    Transformer Design Comparisons for Mitigating EMI in Gate Driver Circuits

    Mar 29,2026
    Matthew Russell, Master’s student at University College Cork, and a student engineer at Bourns Electronics Ireland

    Wide Bandgap Devices Deliver on Their Promise

    Jan 26,2026
    Kevin Parmenter, Pins Out Engineering, for TSC America, Inc.

    Power Systems Design

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