Wide-Bandgap Semis

January 2021

SiC Diodes up Efficiency for High Frequency Applications

Vishay Intertechnology, Inc. introduced 10 new 650 V silicon carbide (SiC) Schottky diodes. Featuring a merged PIN Schottky (MPS) design, the Vishay Semiconductors devices are designed to increase the efficiency of high frequency applications by reducing switching losses regardless of the effects from temperature va

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Date:

01/25/2021

Family of Titanium Efficiency AC to DC Power Supplies

Transphorm, Inc. and Bel Power Solutions stated that six of Bel’s Titanium Efficiency Power Supplies use Transphorm’s high voltage GaN FETs. This news indicates the growing trend of high performance, wide bandgap power supply units (PSUs) being deployed in datacenter servers, routers, and network switches. The six GaN-b

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Date:

01/20/2021

Table 1: Comparison of parameters for G4 750V SiC FETs with similar 650V SiC MOSFETs and 600V Superjunction fast diode FETs

Impact of UnitedSiC Gen 4 Technology on Electric Vehicles

Anup Bhalla, V.P. Engineering at UnitedSiC

The automotive market for Silicon Carbide (SiC) devices is widely expected to exceed the $1.5 billion threshold in 2025 with an annual growth rate (CAGR) of 38 percent. This is driven by the value provided by SiC based components in On-board chargers, DC-DC converters and in Traction inverters. With the launch of

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Date:

01/05/2021