Wide-Bandgap Semis

October 2020
Transphorm Releases Latest High Voltage GaN Reliability Data
Transphorm, Inc. released updated information regarding its GaN technology’s quality and reliability (Q+R). Currently, Transphorm’s GaN platform offers a FIT rate of < 1 failure per billion hours in real-world applications—indicating very high reliability. The FIT calculation is based on more than 10 bi
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Date:
10/30/2020

AEC-Q101-Qualified 700 and 1200V SiC Schottky Barrier Diode
As vehicle electrification continues rapid growth worldwide, innovative power technologies such as Silicon Carbide (SiC) are required for high-voltage automotive systems ranging from motors to on-board charging and DC/DC converters. Microchip Technology Inc. announced its newly-qualified 700 and 1200V SiC Schottky Bar
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Date:
10/28/2020
EPC doubles performance of 200 V eGaN FET family
The applications for these leading-edge devices include class D audio, synchronous rectification, solar MPPTs (maximum power point tracker), DC-DC converters (hard-switched and resonant), and multilevel high voltage converters. The EPC2215 (8 mΩ, 162 Apulsed) and the EPC2207 (22 mΩ, 54 Apulsed) are abo
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Date:
10/15/2020
Würth Electronic Components 2020 catalogue
The 184-page catalogue presents new products and services in the area of passive components, optoelectronics, and power modules. Separate special catalogues are available for many other product categories of Würth Elektronik. All products in the new catalogue are available ex stock. Würth Elektronik is glad to
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Date:
10/15/2020
High-density 4 Mbit Serial EEPROM
This capacity doubles the 2 Mbit density designers previously were limited to. Until now developers have used lower-cost NOR Flash integrated circuits (ICs) for any 2 Mbit+ nonvolatile data set application. Because EEPROM offers performance advantages over NOR Flash, Microchip has responded to customer requests by
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Date:
10/15/2020