Figure 1: Si MOSFET-based architecture for providing AC power to the CPU or GPU
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Figure 1. Dispense Line Consistency (um)
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Figure 1. The above graph shows the strong growth opportunity at hand as emission standards drive a significant shift to battery electric vehicles. (Source: Yole and Cree estimates)
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Figure 1: RDS(on) comparison for a CoolSiC device using various gate drive voltages at different temperatures
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Figure 1. A large driver source current is needed to charge gate capacitances quickly. Source: ON Semiconductor TND6237/D
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Figure 1: Weibull plots of gate-to-source failures of EPC2212. Note that very few failures occur even at 8 VGS , yet the device has a maximum VGS rating of 6 V. The data on the left is at 25oC and the data on the right is at 120oC
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Figure 1: GaN optimized for fast switching
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Figure 1: Two-chip normally-off high voltage GaN FET
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Figure 1: Examples of grid-tied converters
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Figure 1. The half-bridge circuit is widely used to convert electrical energy efficiently in modern designs
