Wide-Bandgap Semis
June 2019
Paul Hart, Senior Vice President and General Manager – Radio Frequency, at NXP Semiconductors
In this episode of the PSDcast, we're discussing 5G and what it'll take to build out the infrastructure. It's no exaggeration to say that 5G will transform telecommunications as we know it and further enable the Internet of Things, but a lot of work remains ...
Date:
06/28/2019
San Jose, Calif. – Power Integrations announced the SCALE-iFlex gate-driver system for IGBT, hybrid and silicon-carbide (SiC) MOSFET power modules with blocking voltages from 1.7 kV to 4.5 kV. The system consists of a central Isolated Master Control (IMC) and one to four Module-Adapted Gate Drivers (MAGs)
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Date:
06/27/2019
UnitedSiC's President and CEO, Chris Dries
In this episode of the PSDcast, we're chatting silicon carbide with UnitedSiC (that's United Ess-Eye-See - no one on this podcast is "sick," pronunciations notwithstanding ). Wide bandgap semiconductors, including SiC, just might be the most ubiquitous topic in the industry, and there's a good reason for tha
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Date:
06/25/2019
GOLETA, Calif.— Transphorm Inc. introduced its second 900 V FET, the Gen III TP90H050WS, enhancing the industry’s only 900 V GaN product line. These devices now enable three-phase industrial systems and higher voltage automotive electronics to leverage GaN’s speed, efficiency and power density. Further, t
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Date:
06/25/2019
Princeton, New Jersey: UnitedSiC has further expanded its UF3C FAST series product offering by introducing an additional 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin Sense discrete package option. The UF3C120150K4S (https://unitedsic.com/datasheets/DS_UF3C120150K4S.pdf) offers a typical on-resistance (RDS(on)) of 1
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Date:
06/20/2019
The demand for more efficient high voltage semiconductors in 5G, automotive, alternative energy and other applications is leading researchers toward new materials including SiC (Silicon Carbide) and GaN (Gallium Nitride). These wide bandgap semiconductors pose increasingly complex test challenges in research an
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Date:
06/20/2019
Philadelphia, PA — AgileSwitch, LLC introduces the ASDAK (Augmented Switching Accelerated Development Kit) for power electronics engineers working with new SiC MOSFET modules. Applications for the kit including heavy-duty traction vehicles, auxiliary power units in trains, buses and trolleys, EV char
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Date:
06/17/2019
Philadelphia, PA — AgileSwitch, LLC, introduces the ASDAK (Augmented Switching Accelerated Development Kit) for power electronics engineers working with new SiC MOSFET modules. Applications for the kit including heavy-duty traction vehicles, auxiliary power units in trains, buses and trolleys, EV charging an
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Date:
06/13/2019
Andover, Massachusetts - ACEINNA announced that their industry leading MCx1101 family of current sensors now supports 3.3 volt applications. These highly accurate, wide bandwidth AMR-based current sensors are now available for a wide range of ADC and microprocessor-based power systems and applications.
Units are now a
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Date:
06/12/2019
(See part 1 and part 2)
SiC Applications in Electric Vehicle (EV) Power Conversion
Electric vehicles (EVs) are seeing rapid growth in shipments, with a great deal of acceleration expected in the 2020s. All major car manufacturers have introduced or have firm plans for EV models and are actively engaged with their
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Date:
06/06/2019
Tao Yuan, Taiwan: WIN Semiconductors Corp has expanded its gallium nitride (GaN) portfolio with the commercial release of a 0.15?m-gate technology, NP15-00, that supports emerging mmWave PA applications including radar, satellite communications and 5G massive MIMO infrastructure. The NP15-00 technology supports f
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Date:
06/03/2019
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