Wide-Bandgap Semis

June 2022

Navitas Powers Xiaomi's First In-Box GaN 100 W Laptop Fast Charger

Navitas Semiconductor has announced that the latest Xiaomi Redmi laptop family 100 W fast chargers are driven by next-generation GaNFast power ICs with GaNSense technology. Consumer electronics giant Xiaomi has adopted GaNFast technology to develop an ultra-compact, high-power-density charger now shipping with a

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Date:

06/30/2022

Rad Hard GaN Transistors Offer Highest Density and Efficiency on the Market

EPC announces the introduction of the EPC7004 radiation-hardened GaN FET. The EPC7004 is a 100 V, 7 mΩ, 160 APulsed, rad-hard GaN FET in a small 6.56 mm2 footprint. The EPC7004 has a total dose radiation rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). The EPC7004, along with the

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Date:

06/29/2022

Click image to enlarge

Figure 1a: Discrete GaN FET on PCB and ‘hidden’ parasitic resonant network with switching current paths

Unlocking GaN's Full Potential

Tom Ribarich, Sr. Director Strategic Marketing, Navitas Semiconductor

GaNFastPower ICs have enabled 10x higher switching frequencies versus Silicon and achieved unprecedented power densities (1.3 W/cc) due to their integrated and regulated gate drive technology. Discrete GaN FETs continue to have slow adoption due to ruggedness & reliability concerns, plus difficulties with des

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Date:

06/01/2022