Wide-Bandgap Semis

    May 2025
    Optimizing Flying Capacitor Multilevel Converters for GaN Technology

    Figure 1: Power schematic circuit for the bi-directional three-level, two-phase converter

    Introduction Modern power systems demand higher efficiency, increased power density, and reduced electromagnetic interference (EMI)—all while adhering to shrinking size constraints. Among the converter topologies addressing these challenges, the Flying Capacitor Multilevel (FCML) converter stands out for it
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    Date:
    05/30/2025
    15W AC/DC Power Modules feature Widest Input Range

    RECOM’s versatile and cost-effective ultra-wide input AC/DCs do not compromise on performance

    ­  RECOM has again pushed the boundaries of AC/DC performance with a miniature15W part that operates over a wide input range of 18-264VAC or 18-375VDC.   The board-mount RAC15-K/WI is just 1.5” x 2” (52.5mm x 40mm) footprint with an industry-standard pinout or optionally flying wires, and provides a range o
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    Date:
    05/29/2025
    PSDcast – Wide Band-Gap Devices Support Power Density in EV and Hybrid Vehicles

    Pradeep Shenoy, the manager of power design services over at Texas Instruments

    ­Today, we’re discussing power density in vehicles – specifically, hybrid and electric vehicles. As EVs and hybrids get ever more sophisticated, we’re starting to see the serious limitations of traditional silicon-based power devices and packaging…which is where wide band-gap devices come in. And on th
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    Date:
    05/22/2025
    SemiQ Expands Gen3 SiC MOSFET Offering, Launches 1200 V TSPAK Series with Top-Side Cooling and Isolated Thermal Path

    SemiQ Expands Gen3 SiC MOSFET Offering, Launches 1200 V TSPAK Series with Top-Side Cooling and Isolated Thermal Path

    SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, has announced the expansion of its Gen3 SiC MOSFET offering, launching a 1200 V TSPAK-packaged series. The four-strong series of Gen3 MOSFET
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    Date:
    05/07/2025
    Infineon Expands its GaN Power Portfolio with EasyPACK CoolGaN Power Modules for High-Voltage Applications

    With the introduction of CoolGaN power semiconductors in the EasyPACK package, Infineon is now expanding the range of applications for gallium nitride.

    ­With the rapid growth of AI data centers, the increasing adoption of electric vehicles, and the ongoing trends in global digitalization and reindustrialization, global electricity demand is expected to surge. To address this challenge, Infineon Technologies AG is introducing the EasyPACK™ CoolGaN™ Transistor 65
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    Date:
    05/02/2025
    Exploring How Silicon Carbide is Transforming Energy Systems

    Click image to enlarge

    Figure 1: One area these experts are excited about is the decarbonization of the grid, which involves transitioning away from fossil fuel power plants (like coal and oil)

    ­Silicon carbide (SiC) has become a cornerstone for enhancing efficiency and supporting decarbonization across industries. It’s an enabler for advanced power systems, addressing growing global demands in renewable energy, electric vehicles (EVs), data centers and grid infrastructure. SiC technology has advantages ov
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    Date:
    05/01/2025
    Archive

    Transformer Design Comparisons for Mitigating EMI in Gate Driver Circuits

    Mar 29,2026
    Matthew Russell, Master’s student at University College Cork, and a student engineer at Bourns Electronics Ireland

    Wide Bandgap Devices Deliver on Their Promise

    Jan 26,2026
    Kevin Parmenter, Pins Out Engineering, for TSC America, Inc.

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