Wide-Bandgap Semis

March 2024

GaN for Low-cost e-bikes, Drones, and Robotics

EPC announces the availability of the EPC9193, a 3-phase BLDC motor drive inverter using the EPC2619 eGaN® FET. The EPC9193 operates with a wide input DC voltage ranging from 14 V and 65 V and has two configurations – a standard unit and a high current version: · The EPC91

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Date:

03/22/2024

VPT Announces Release of the New 1600W, GaN-based SGRBX DC-DC Converter

VPT, Inc., a HEICO company, announces the release of the first-ever configurable box solution featuring state-of-the-art GaN technology: the SGRBX. Housing up to four award-winning SGRB DC-DC converter slices within its framework, the SGRBX delivers up to 1600 watts of output power. Utilizing th

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Date:

03/14/2024

Navitas GaN and SiC Technologies to Enable Next-Gen AI Power Delivery

Navitas Semiconductor, the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced their AI data center technology roadmap for up to 3x power increase to support similar exponential growth in AI power de

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Date:

03/11/2024

Analog Devices' GaN Driver Enables Robust and Reliable Control of GaN FETs

Analog Devices, Inc. (ADI) now offers a 100V half-bridge GaN driver that simplifies the implementation of GaN FETs, proving robust gate control, high frequency switching, and increased system efficiency. Integrating top and bottom driver stages, driver logic control, and protections, the new LT8418 can be

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Date:

03/08/2024

Infineon CoolSiC™ MOSFET 650 V and 1200 V G2 operate with lower power losses in all operation modes in photovoltaic inverters, energy storage installations and EV charging, and more.

Infineon Introduces CoolSiC MOSFET G2, the Next Generation of Silicon Carbide Technology for High-Performance Systems that Drive Decarbonization

Infineon Technologies AG opens a new chapter in power systems and energy conversion and introduces the next generation of silicon carbide (SiC) MOSFET trench technology. The new Infineon CoolSiC™ MOSFET 650 V and 1200 V Generation 2 improve MOSFET key performance figures such as stored energies an

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Date:

03/05/2024

SiC Inverter Control Modules Accelerate the Development of Compact and Efficient Electric Motor Drivetrains

CISSOID releases its new series of SiC Inverter Control Modules (ICMs) dedicated to the E-mobility market. These software-powered SiC Inverter Control Modules are designed to help engineers create functionally safe, robust and modular E-motor drives while dramatically shortening time-to-market. The new CXT-I

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Date:

03/05/2024

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Figure 1: Microchip’s SiC portfolio

SiC Solutions Extend the Range of High-Power Applications

Perry Schugart, Microchip Technology

The demand for power devices is constantly increasing, driven by the impulse coming from sectors with major innovation such as e-mobility, renewable energy, and data centers. Power applications today have continuously more stringent requirements, linked above all to achieving higher efficiency (with consequent re

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Date:

03/01/2024

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Figure 1. Visualization of a FIB-SEM tomography datasets obtained from a SiC MOSFET samples. The top image shows the full volume, while the bottom one presents the same dataset with a cuboid of approximately one third of the volume cut away....

Maximizing Yield and Performance of Power Devices by Deep Learning

Heiko Stegmann, Carl Zeiss Microscopy GmbH, Oberkochen, Germany

Silicon carbide (SiC) MOSFETs have become predominantly used in power semiconductors, particularly for automotive applications. To support process development, improve manufacturing yield, and reduce sub-surface failures in finished products, engineers must understand the structure, dopant and junction profiles, an

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Date:

03/01/2024

Wide-Bandgap Semis

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