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    Wide-Bandgap Semis

    March 2024
    GaN for Low-cost e-bikes, Drones, and Robotics

    GaN for Low-cost e-bikes, Drones, and Robotics

    GaN for Low-cost e-bikes, Drones, and Robotics
    EPC announces the availability of the EPC9193, a 3-phase BLDC motor drive inverter using the EPC2619 eGaN® FET. The EPC9193 operates with a wide input DC voltage ranging from 14 V and 65 V and has two configurations – a standard unit and a high current version: ·     The EPC91
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    Date:
    03/22/2024
    VPT Announces Release of the New 1600W, GaN-based SGRBX DC-DC Converter

    VPT Announces Release of the New 1600W, GaN-based SGRBX DC-DC Converter

    VPT Announces Release of the New 1600W, GaN-based SGRBX DC-DC Converter
    VPT, Inc., a HEICO company, announces the release of the first-ever configurable box solution featuring state-of-the-art GaN technology: the SGRBX. Housing up to four award-winning SGRB DC-DC converter slices within its framework, the SGRBX delivers up to 1600 watts of output power. Utilizing th
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    Date:
    03/14/2024
    Navitas GaN and SiC Technologies to Enable Next-Gen AI Power Delivery

    Navitas GaN and SiC Technologies to Enable Next-Gen AI Power Delivery

    Navitas GaN and SiC Technologies to Enable Next-Gen AI Power Delivery
    ­Navitas Semiconductor, the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced their AI data center technology roadmap for up to 3x power increase to support similar exponential growth in AI power de
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    Date:
    03/11/2024
    Analog Devices' GaN Driver Enables Robust and Reliable Control of GaN FETs

    Analog Devices' GaN Driver Enables Robust and Reliable Control of GaN FETs

    Analog Devices' GaN Driver Enables Robust and Reliable Control of GaN FETs
    ­Analog Devices, Inc. (ADI) now offers a 100V half-bridge GaN driver that simplifies the implementation of GaN FETs, proving robust gate control, high frequency switching, and increased system efficiency. Integrating top and bottom driver stages, driver logic control, and protections, the new LT8418 can be
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    Date:
    03/08/2024
    Infineon Introduces CoolSiC MOSFET G2, the Next Generation of Silicon Carbide Technology for High-Performance Systems that Drive Decarbonization

    Infineon CoolSiC™ MOSFET 650 V and 1200 V G2 operate with lower power losses in all operation modes in photovoltaic inverters, energy storage installations and EV charging, and more.

    Infineon Introduces CoolSiC MOSFET G2, the Next Generation of Silicon Carbide Technology for High-Performance Systems that Drive Decarbonization
    ­Infineon Technologies AG opens a new chapter in power systems and energy conversion and introduces the next generation of silicon carbide (SiC) MOSFET trench technology. The new Infineon CoolSiC™ MOSFET 650 V and 1200 V Generation 2 improve MOSFET key performance figures such as stored energies an
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    Date:
    03/05/2024
    SiC Inverter Control Modules Accelerate the Development of Compact and Efficient Electric Motor Drivetrains

    SiC Inverter Control Modules Accelerate the Development of Compact and Efficient Electric Motor Drivetrains

    SiC Inverter Control Modules Accelerate the Development of Compact and Efficient Electric Motor Drivetrains
    ­CISSOID releases its new series of SiC Inverter Control Modules (ICMs) dedicated to the E-mobility market. These software-powered SiC Inverter Control Modules are designed to help engineers create functionally safe, robust and modular E-motor drives while dramatically shortening time-to-market. The new CXT-I
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    Date:
    03/05/2024
    SiC Solutions Extend the Range of High-Power Applications

    Click image to enlarge

    Figure 1: Microchip’s SiC portfolio

    SiC Solutions Extend the Range of High-Power Applications
    Perry Schugart, Microchip Technology

    ­The demand for power devices is constantly increasing, driven by the impulse coming from sectors with major innovation such as e-mobility, renewable energy, and data centers. Power applications today have continuously more stringent requirements, linked above all to achieving higher efficiency (with consequent re
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    Date:
    03/01/2024
    Maximizing Yield and Performance of Power Devices by Deep Learning

    Click image to enlarge

    Figure 1. Visualization of a FIB-SEM tomography datasets obtained from a SiC MOSFET samples. The top image shows the full volume, while the bottom one presents the same dataset with a cuboid of approximately one third of the volume cut away....

    Maximizing Yield and Performance of Power Devices by Deep Learning
    Heiko Stegmann, Carl Zeiss Microscopy GmbH, Oberkochen, Germany

    ­Silicon carbide (SiC) MOSFETs have become predominantly used in power semiconductors, particularly for automotive applications. To support process development, improve manufacturing yield, and reduce sub-surface failures in finished products, engineers must understand the structure, dopant and junction profiles, an
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    Date:
    03/01/2024
    Archive

    Transformer Design Comparisons for Mitigating EMI in Gate Driver Circuits

    Mar 29,2026
    Matthew Russell, Master’s student at University College Cork, and a student engineer at Bourns Electronics Ireland

    STMicroelectronics' new MasterGaN power ICs Combine Flexibility with Advanced GaN Technology

    Feb 24,2026

    Wide Bandgap Devices Deliver on Their Promise

    Jan 26,2026
    Kevin Parmenter, Pins Out Engineering, for TSC America, Inc.

    onsemi to Develop Next-Generation GaN Power Devices with GlobalFoundries

    Dec 18,2025

     

     

     

     

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