Wide-Bandgap Semis
June 2018
Brighton: Advanced Material Development (AMD) has raised a total of £750,000 in funding, as the company launches its plan to exploit the commercial potential of applications for graphene and other 2D nanomaterials. The company will contribute £600,000 to fund several distinct research projects conducted by th
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Date:
06/28/2018
Shigenao Ishiguro, President and CEO of TDK Corporation, and Yoshiko Tanahashi, Director of Clarivate Analytics Japan
TDK Corporation announced that it has been selected as one of the 2017 Top 100 Global Innovators (http://top100innovators.clarivate.com/content/tdk) by Clarivate Analytics (formerly the Intellectual Property and Science business of Thomson Reuters). This is the fourth time TDK has been named to the prestigious lis
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Date:
06/19/2018
Ampleon today announced the introduction of its BLF989 RF power transistor designed for UHF broadcast applications such as DVBT and UHF analog TV. Using Ampleon’s latest Gen9HV high voltage LDMOS process, this 140 Watt (average – 700 Watt peak) transistor, the first broadcast device to use this process techn
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Date:
06/18/2018
Global energy efficiency standards often prohibit manufacturers from importing or selling products that do not meet these standards. In order to comply with specific minimum requirements, energy losses have to be reduced by using the latest technology. Infineon Technologies now offers the IM512 and IM513 series of the CIP
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Date:
06/18/2018
Automotive designers can significantly lower EMI and increase efficiency with the pin-compatible MAX20073 and MAX20074 buck converters from Maxim Integrated Products, Inc. (NASDAQ: MXIM). The compact converters, which offer the industry’s lowest EMI performance for low-voltage point-of-load applications, are
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Date:
06/18/2018
Infineon Technologies expands its product portfolio of the thin-wafer technology TRENCHSTOP™5 IGBT. The new product family is offering up to 40 A 650V IGBT, co-packed with a full rated 40 A diode in a surface mounting TO-263-3 also known as D2PAK. The new TRENCHSTOP 5 IGBT in D2PAK package serves the growing deman
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Date:
06/18/2018
Increasing complexity of end products is challenging the design parameters for high power supplies: these require higher power and more efficiency in an even smaller space. Semiconductor devices are essential to the operation and performance of modern switched mode power supplies (SMPS). Over the last years, a tr
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Date:
06/18/2018
Lowell, Massachusetts–MACOM Technology Solutions Inc. (“MACOM”) announced a new portfolio of wideband double-balanced mixers, covering the 8 – 43 GHz and 18 – 46 GHz frequency ranges. Delivering low conversion loss, high linearity and a wide intermediate frequency (IF) bandwidth, the new MAMX Series mi
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Date:
06/13/2018
TAOYUAN, Taiwan -- WIN Semiconductors Corp has expanded its portfolio of highly integrated GaAs technologies with the release of a new pHEMT technology. The PIH0-03 platform incorporates monolithic PIN and vertical Schottky diodes with WIN’s high performance 0.1um pseudomorphic HEMT process, PP10. This integrat
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Date:
06/13/2018
NORWOOD, Mass.—Analog Devices, Inc. (ADI) expanded its award-winning RadioVerse technology and design ecosystem with the industry’s widest bandwidth RF transceiver, which provides designers with a single radio platform to accelerate the deployment of 5G, sustain 2G/3G/4G coverage, and simplify phased
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Date:
06/12/2018
Hoffman Estates, IL. – Industrial automation solutions provider Omron Automation Americas recently announced the 2017 fiscal year’s winners of the prestigious Distributor of the Year award at its FY18 Sales Conference during the week of May 21st. Over 650 persons representing Omron and its channel pa
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Date:
06/12/2018
FOUNTAIN INN, S.C. – AVX Corporation has joined the Electronics Representatives Association (ERA) as a manufacturer member.
“AVX is proud to become a member of the ERA,” said Alex Schenkel, vice president of global sales, AVX. “The ERA is one of the most respected international trade organizations in the gl
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Date:
06/08/2018
Tao Yuan, Taiwan -- WIN Semiconductors Corp has expanded its gallium nitride (GaN) process capabilities to include a 0.45um-gate technology that supports current and future 5G applications. The NP45-11 GaN-on-SiC process allows customers to design hybrid Doherty power amplifiers used in 5G applications including ma
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Date:
06/08/2018
In some ways digital designers have it easier than their analogue and mixed signal compatriots. They have many more tools at their disposal to verify and validate designs before they go to fabrication, which can bring a reasonable measure of assurance that they have their design right, as well as tools that ca
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Date:
06/05/2018
Earlier this year, President Trump’s budget proposal toyed with the notion of draconian cuts to renewable energy subsidies and R&D. And while the $1.3 trillion spending bill ultimately passed without the proposed reductions, the episode reignited the energy subsidy debate. To wit – yay or nay?
On the one h
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Date:
06/05/2018
KYOTO, Japan and OTTAWA, Canada – ROHM and GaN Systems announced their collaboration in the GaN (gallium nitride) Power Semiconductor business, with the goal of contributing to the continuing evolution of power electronics.
This strategic partnership leverages GaN Systems’ industry leading capabilit
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Date:
06/04/2018
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