Wide-Bandgap Semis
November 2021
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Prof Dim-Lee Kwong, Executive Director, Institute of Microelectronics
The Institute of Microelectronics (IME) at the Agency for Science, Technology and Research (A*STAR) and STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, announced the start of a Research & Development (R&D) collaboration in
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Date:
11/26/2021
Solitron Devices is pleased to announce the introduction of the SD11702, 650V Silicon Carbide (SiC), ultra-low RDS(on) MOSFET.
Packaged in a hermetically sealed TO-258, the SD11702 is built for the most demanding industrial, aerospace and defence applications. With operating temperatures of -55°C
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Date:
11/23/2021
Navitas Semiconductor has announced the launch of GaNFast power ICs with GaNSense technology. GaNSense technology integrates critical, real-time, autonomous sensing and protection circuits which further improves Navitas’ industry-leading reliability and robustness, while increasing the energy savings an
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Date:
11/08/2021
November 4, 2021– Qorvo® (Nasdaq: QRVO), a leading provider of innovative RF solutions that connect the world, has announced that it has acquired Princeton, New Jersey-based United Silicon Carbide (UnitedSiC), a leading manufacturer of silicon carbide (SiC) power semiconductors. The acquisition of United Silicon
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Date:
11/04/2021
As you read this, we’ve surpassed the spooky part of the year, and we’re rapidly approaching the grandaddy of all gluttonous feasts and a holiday where a jolly fat man squeezes down your chimney to deliver gifts.
And despite COVID stubbornly sticking around, like that freeloading uncle over the holidays,
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Date:
11/01/2021
Hassane El-Khoury, president and chief executive officer of onsemi
onsemi announced that it has completed its acquisition of GT Advanced Technologies, a producer of silicon carbide (SiC). The acquisition enhances onsemi’s ability to secure and grow supply of SiC.
onsemi’s customers will benefit from GTAT’s extensive experience in crystalline growth as well as its
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Date:
11/01/2021
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Figure 1: A JFET (left), SiC FET cascode (middle) and a dual gate SiC FET cascode (right)
Mechanical circuit breakers provide a secure means to make an almost lossless connection when on, and provide complete isolation when off, but they have their drawbacks. They are relatively slow to make and break and they arc across their contacts, particularly with DC, resulting in a limited operating life. Ne
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Date:
11/01/2021
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Figure 1: Voltage modulation and phase current at 20 kHz with 500 ns dead time
So far, silicon-based power devices have been dominant in the inverter electronics, but today their performance is nearing their theoretical limits. There is an increasing need for higher power density. Gallium nitride (GaN) transistors and ICs have the best attributes to satisfy these needs.
The superior
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Date:
11/01/2021
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