Wide-Bandgap Semis
April 2025
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SemiQ Launches 1200 V Gen3 SiC MOSFET Modules in SOT-227 Package for Reduced Switching Losses and Improved Thermal Resistance
SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology.
In addition to smaller
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Date:
04/24/2025
Infineon CoolGaN™ Transistors with integrated Schottky diode increase the performance of power systems by reducing undesired deadtime losses.
Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN™ Transistors G5 with integrated Schottky diode increases the performance of power systems by reducing undesired de
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Date:
04/18/2025
SemiQ 1200 V SiC MOSFETs Six-Pack Modules with High Power Density and Low Switching Losses Enables Compact, Cost-Optimized Systems
SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, has announced a series of highly efficient 1200 V SiC MOSFET Six-Pack Modules. These have been designed to enable lower cost and more compact sy
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Date:
04/16/2025
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Figure 1: TRCDRIVE pack is a compact module offering high current density with heat dissipation on one side that has been developed for controlling traction inverters and is based on ROHM’s proprietary module technology
Mobility is a key part of our daily life. The rapid move to carbon-neutral and energy-efficient means of transport is making an important contribution to a greener future. Development of electric drives that are more compact, efficient and also lighter has a key part to play here - not only in promoting greater in
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Date:
04/01/2025
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