Wide-Bandgap Semis
July 2021
EPC Space announces the introduction of EPC7014UB, a 60 V radiation-hardened gallium nitride transistor that is lower in cost and is a more efficient solution than the nearest comparable radiation hardened (RH) silicon MOSFET. Utilizing GaN technology, the EPC7014UB outperforms RH silicon-based devices as
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Date:
07/28/2021
Today’s energy-efficient electric charging systems powering commercial vehicle propulsion, as well as auxiliary power systems, solar inverters, solid-state transformers and other transportation and industrial applications all rely on high-voltage switching power devices. To meet these requirements, Microchip Te
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Date:
07/27/2021
This is partly due to packaging requirements and partly due to the bespoke requirements for individual use cases. This drives up the cost of components for high-power applications as there is very little economy of scale. Infineon has tried to buck this trend somewhat with its new EasyPACK CoolSiC MOSFET module that
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Date:
07/16/2021
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Figure 1: Typical EV power conversion elements
Ask any power electronics designer what they strive for and top of the list is normally conversion efficiency. It’s not just for energy savings but also the knock-on benefits of smaller, lighter and cheaper products, with options opening up for better reliability and more functionality in space that’s freed-up. So
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Date:
07/01/2021
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Figure 1: Si, SiC and GaN material characteristics
A basic building block in power conversion electronics is the semiconductor switch. The ideal is one with no static or dynamic losses that can withstand high voltage in the off state and with no leakage when on – but that is always just out of reach. One of the closest though is the wide band-gap technology Si
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Date:
07/01/2021
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