Wide-Bandgap Semis
July 2023
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Figure 1: Transient thermal impedance of Qorvo device UJ4SC07500L8S v. pulse width and duty cycle
The race to reduce power losses in semiconductor switches is being led by wide band-gap (WBG) devices and particularly SiC FETs, cascodes of a silicon carbide JFET and co-packaged silicon MOSFET. This arrangement produces a normally-off device with an easy gate drive and a trophy cabinet of ‘figures of merit’ th
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Date:
07/01/2023
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