Wide-Bandgap Semis

    December 2025
    onsemi to Develop Next-Generation GaN Power Devices with GlobalFoundries

    Dinesh Ramanathan, Senior Vice President of Corporate Strategy, onsemi

    ­onsemi announced it has signed a collaboration agreement with GlobalFoundries to develop and manufacture advanced gallium nitride (GaN) power products using GF’s state-of-the-art 200mm eMode GaN-on-silicon process, starting with 650V. This collaboration accelerates onsemi’s roadmap for high-performance Ga
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    Date:
    12/18/2025
    Navitas, Cyient Semiconductors Enter into a Strategic Partnership to Accelerate GaN Adoption in India’s AI, Mobility, Industrial, and Energy Markets

    Navitas, Cyient Semiconductors Enter into a Strategic Partnership to Accelerate GaN Adoption in India’s AI, Mobility, Industrial, and Energy Markets

    ­Navitas Semiconductor Corporation, the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors and Cyient Semiconductors Private Limited, a fast-growing provider of ASIC, ASSP and power solutions provider have announced a st
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    Date:
    12/08/2025
    Infineon Enhances Electreon's Electric Road Charging with High-Power Silicon Carbide Technology

    Electreon's wireless charging system leverages Infineon’s SiC modules to maximize performance, reliability and energy efficiency.

    ­Infineon Technologies AG will supply customized silicon carbide (SiC) power modules to Electreon (TASE: ELWS), a leading provider of wireless charging solutions for electric vehicles (EVs), for its dynamic in-road charging technology. This wireless electric road system (wERS) lets EVs charge wirelessly using in
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    Date:
    12/04/2025
    Minimizing Emissions from a Ćuk Regulator

    Click image to enlarge

    Figure 1. Schematic diagram of a Ćuk topology for generating negative voltages.

    ­The Ćuk topology is ideal for generating a negative output voltage from a positive supply voltage. Negative voltages are needed in many systems to enable useful readout of signals from certain sensors. For this, a signal chain may need to be supplied, for example, with +5V and –5V or even +15V and –15V. Ne
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    Date:
    12/01/2025
    Archive

    Transformer Design Comparisons for Mitigating EMI in Gate Driver Circuits

    Mar 29,2026
    Matthew Russell, Master’s student at University College Cork, and a student engineer at Bourns Electronics Ireland

    Wide Bandgap Devices Deliver on Their Promise

    Jan 26,2026
    Kevin Parmenter, Pins Out Engineering, for TSC America, Inc.

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