Wide-Bandgap Semis
September 2019
San Jose, Calif. – Power Integrations announced the delivery of its one-millionth InnoSwitch 3 switcher IC featuring the company’s PowiGaN gallium-nitride technology. In an event at the Shenzhen headquarters of Anker Innovations, Power Integrations CEO Balu Balakrishnan presented the one-millionth GaN-based IC to Ank
. . . Learn More
Date:
09/30/2019
Figure 1: IEC/EN 62368-1 is not a merge of the two standards IEC/EN 60065 and IEC/EN 60950 but a completely new one introducing a new way of working
Safety regulations have been in place for decades in the power industry and as we know only too well, all have been through lots of revisions. And although each revision has made them more stringent and tailored to our businesses, we have become familiar with designing products to conform to latest versions. So
. . . Learn More
Date:
09/30/2019
Murata’s innovative and patented pdqb winding technology makes it possible to construct high frequency transformers of up to and over 400 kW that can operate at frequencies as high as 50 kHz. The pdqb winding technique overcomes the skin and proximity effects as well as other high frequency losses associated w
. . . Learn More
Date:
09/26/2019
Packaged in an industry standard 2x1 inch, six sided, shielded metallic case, the MGF80 series has been designed to Cosel’s strict criteria for high performance and reliability, contributing to the company’s world class quality with a failure rate of below 30 parts-per-million (ppm). All components are sele
. . . Learn More
Date:
09/26/2019
The SA modules are available with 5V /15A, 12V /12.5A, 15V /10A and 24V /6.25A outputs and offer a cost-effective solution for low power output requirements.
The SA module’s patented loop control design uses a digital controller and TDK-Lambda developed algorithms. Phase mode control provides higher stability ac
. . . Learn More
Date:
09/26/2019
The EBA reconfirms that the business size of the European battery value chain will represent more than 250B€ annually, by 2025.
Designed to bridge the gap between financial institutions and businesses, the BIP will shorten time to investment and substantially reduce the associated risk for both parties by
. . . Learn More
Date:
09/26/2019
It is a fully integrated and highly efficient device in two versions (IR3826AM for 16 A and IR3826M for 23 A) for applications such as netcom router and switches, datacom, telecom base stations, server and enterprise storage.
The voltage regulator can operate from an input voltage of 12 V (5 V to 17 V) and provide up
. . . Learn More
Date:
09/26/2019
Key features include independently controlled output currents configured through an I2C-compatible interface and the ability to combine two devices (with different device identification addresses) to drive four LEDs up to 6A for quad-channel applications. The AL3644 is offered in chip-scale packaging and combines
. . . Learn More
Date:
09/26/2019
The current sharing capability enables two or more converters to be used in parallel for demanding datacom applications, thus delivering higher power on a single rail and improving redundancy.
Up to six BMR490 converters may be used in parallel. When used in combination with OR-ing, this increases redundancy,
. . . Learn More
Date:
09/26/2019
The ADF4371 delivers one of the highest frequency synthesizers in the industry today, offering the widest continuous RF output range available — 62 MHz to 32 GHz — while the ADF4372 operates at 62 MHz to 16 GHz for designs that do not require the higher frequency.
Analog Devices’ ADF4371 and ADF4372 microwave wide
. . . Learn More
Date:
09/26/2019
The cost-effective RWS-B series of AC-DC industrial power supplies comprises 10 models, each coming with an isolated 5V 1A standby voltage option. This latter feature makes the series suitable for markets including industrial, communications, test and measurement, LED signage equipment, and alternative-energy ap
. . . Learn More
Date:
09/26/2019
These miniature MOSFETs occupy just 10% of the PCB area of larger packages, such as SOT223, enabling greater power density in DC-DC converters, LED backlighting, ADAS, and other “under-the-hood” automotive applications.
The DMTH4008LFDFWQ has a typical RDS(ON) of 11.5mΩ at VGS = 10V and a gate charge, Qg, of j
. . . Learn More
Date:
09/26/2019
The converters deliver a space-saving solution for bus isolation and general industrial power applications.
These open-frame surface-mount modules are available with standard isolation rating of 1kV/second or in a high-voltage 3kV/second version. Customers can choose a nominal input voltage of 5V with unregu
. . . Learn More
Date:
09/26/2019
This new partnership adds to the more than 8.7 million products available from more than 800 manufacturers through Digi-Key.
Directed Energy provides ready-to-use modules for driving laser diodes as well as applications requiring a high voltage pulse. Directed Energy's modules allow users to focus on their e
. . . Learn More
Date:
09/26/2019
DURHAM, N.C.--Cree, Inc. announced plans to establish a silicon carbide corridor on the East Coast of the United States with the creation of the world’s largest silicon carbide fabrication facility. The company will build a brand new, state-of-the-art, automotive-qualified 200mm power and RF wafer fabrication fa
. . . Learn More
Date:
09/23/2019
Mouser Electronics, Inc., has signed a global distribution agreement with Transphorm, manufacturers of high-quality, high-reliability gallium nitride (GaN) transistors for high-voltage power conversion applications. According to the agreement, Mouser will distribute Transphorm’s lines of JEDEC- and AEC-Q101-qualified Ga
. . . Learn More
Date:
09/17/2019
DURHAM, N.C. — Delphi Technologies PLC and Cree, Inc. announce a partnership to utilize silicon carbide semiconductor device technology to enable faster, smaller, lighter and more powerful electronic systems for future electric vehicles (EV).
Cree’s silicon carbide-based MOSFET (metal–oxide–semicond
. . . Learn More
Date:
09/10/2019
At the interface between silicon dioxide and silicon carbide, irregular clusters of carbon rings occur, which disturb the electronic function.
In power electronics, semiconductors are based on the element silicon - but the energy efficiency of silicon carbide would be much higher. Physicists of the University of Basel, the Paul Scherrer Institute and ABB explain what exactly is preventing the use of this combination of silicon and carbon in the scientific jo
. . . Learn More
Date:
09/05/2019
The general-purpose electronics test equipment segment includes oscilloscopes, signal generators, digital multimeters, logic analyzers, spectrum analyzers, Bit Error Rate Testers (BERT), Vector Network analyzers, power meters, electronic counters, modular instrumentation, Automated Test Equipment (ATE), and po
. . . Learn More
Date:
09/03/2019
Click image to enlarge
Figure 1: Inductance common to source and gate drive causes voltage transients
Gallium Nitride (GaN) HEMT is the enabler for demonstrations of power converters with end-to-end efficiencies greater than today silicon-based solution, comfortably exceeding the most stringent 80+ spec for server and cloud data center or EU Code of Conduct Tier 2 standard for USB PD external adapter. Wh
. . . Learn More
Date:
09/03/2019
Archive
