Wide-Bandgap Semis
January 2022
Stephen Oliver, the VP of Corporate Marketing & Investor Relations at Navitas
Navitas Semiconductor has opened the world’s first GaN IC design center dedicated to EVs. This is a monumental bit of news with ripples that could spread across the globe, and we’re eager to learn more.
Date:
01/27/2022
Navitas officially announced that its next-generation GaNFast power IC drives the 120W ultra-fast charger supplied ‘in-box’ with vivo’s iQOO-brand flagship iQOO 9 Pro mobile phone. The 9 Pro’s powerful 4,700 mAhr battery charges from 0-100% in only 19 lightning-fast minutes, and at only 60
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Date:
01/19/2022
TTI has stock for immediate shipment of the SCT3060AL 650V Silicon Carbide (SiC) MOSFET from ROHM Semiconductor.
With over 100 SiC part numbers, ROHM is a world leader in SiC. The SCT3060AL is an N-Channel MOSFET with a continuous drain current rating of 39A and power dissipation of 165W. It is packaged in the TO
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Date:
01/12/2022
Navitas Semiconductor announced the opening of a new electric vehicle (EV) Design Center, further expanding into higher-power GaN markets. GaN-based on-board chargers (OBCs) are estimated to charge 3x faster with up to 70% energy savings compared to legacy silicon solutions. GaN OBCs, DC-DC converters and tr
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Date:
01/04/2022
Among the most promising technologies in the mission to decarbonize emissions-intensive transportation vehicles are SiC-based power-management solutions supported by configurable digital gate driver technology.
The high power and voltage requirements of electric vehicles (EVs) of all types, including electric
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Date:
01/01/2022
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