Design Centers
    Wide-Bandgap Semis

    650V SiC MOSFET From ROHM in Stock at TTI

    01/12/2022

    TTI has stock for immediate shipment of the SCT3060AL 650V Silicon Carbide (SiC) MOSFET from ROHM Semiconductor.

    With over 100 SiC part numbers, ROHM is a world leader in SiC. The SCT3060AL is an N-Channel MOSFET with a continuous drain current rating of 39A and power dissipation of 165W. It is packaged in the TO247N package and is rated for 175°C. The ROHM SCT3060ALHR version is AEC-Q101 qualified. ROHM SiC MOSFETs are available up to 1700V and are ideal for use in inverters, DC/DC converters, motor drives and switch mode power supplies. The ROHM Solution Simulator web tool is capable of complete circuit verification of power devices and driver ICs.

    For more information, visit ROHM SCT3060AL 650V SiC MOSFETs at TTI.

    Related

    Power Systems Design

    146 Charles Street
    Annapolis, Maryland 21401 USA

    Power Systems Design

    Power Systems Design is a leading global media platform serving the power electronics design engineering community. It delivers in-depth technical content, industry news, and product insights to engineers and decision-makers developing advanced power systems and technologies.

    Published 12× per year across North America and Europe, Power Systems Design is distributed through online and fully digital editions, complemented by eNewsletters, webinars, and multimedia content. The platform covers key areas including power conversion, semiconductors, renewable energy, automotive electrification, AI power systems, and industrial applications—supporting innovation across the global electronics industry.