>
>
Wide-Bandgap Semis

 



 

 

Wide-Bandgap Semis

March 2018
1200V SiC MOSFETs Feature Ultra-Low On-Resistances
CHICAGO — Littelfuse, Inc. added two 1200V silicon carbide (SiC) n‑channel, enhancement-mode MOSFETs to their expanding first-generation portfolio of power semiconductor devices. These new SiC MOSFETs are the latest products of a strategic partnership that Littelfuse formed with Monolith
. . . Read More
Date:
03/09/2018
ON Semiconductor’s SiC diodes offer higher efficiency, power density and lower system costs
ON Semiconductor has extended its SiC diode portfolio by introducing its newest family of 650 V silicon carbide (SiC) Schottky diodes. The diodes’ cutting edge, silicon carbide technology provides higher switching capabilities with lower power losses and effortless
. . . Read More
Date:
03/07/2018
PSDcast - Using Silicon Carbide to Reduce Carbon Emissions

Silicon carbide

In this episode of the PSDcast, we’re talking with Texas Instruments about a popular disruptive technology – silicon carbide gate drivers – and its potential to reduce carbon dioxide emissions in high-voltage applications. Texas
. . . Read More
Date:
03/01/2018

 

 



 Home | Site Map | Contact | Privacy Policy | Refund Policy | Terms of Service | Copyright © 2019 Power Systems Corporation, All rights reserved 
X

Join Our Newsletter

Sign up today for free and be the first to get notified.