Wide-Bandgap Semis

March 2018
1200V SiC MOSFETs Feature Ultra-Low On-Resistances
CHICAGO — Littelfuse, Inc. added two 1200V silicon carbide (SiC) n‑channel, enhancement-mode MOSFETs to their expanding first-generation portfolio of power semiconductor devices. These new SiC MOSFETs are the latest products of a strategic partnership that Littelfuse formed with Monolith in 2015 to develop
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ON Semiconductor’s SiC diodes offer higher efficiency, power density and lower system costs
ON Semiconductor has extended its SiC diode portfolio by introducing its newest family of 650 V silicon carbide (SiC) Schottky diodes. The diodes’ cutting edge, silicon carbide technology provides higher switching capabilities with lower power losses and effortless paralleling of devices. ON Semiconductor’s
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PSDcast - Using Silicon Carbide to Reduce Carbon Emissions

Silicon carbide

In this episode of the PSDcast, we're talking with Texas Instruments about a popular disruptive technology - silicon carbide gate drivers - and its potential to reduce carbon dioxide emissions in high-voltage applications ...