Wide-Bandgap Semis

May 2020

Rectifiers Offer Best-in-Class (8A/1kV) Specifications

Taiwan Semiconductor announces the introduction of the TUAS8x Series of surface-mount device (SMD) rectifiers, available with voltage ratings from 200V-1000V. The TUAS8x Series device’s wettable flank package enables higher power density, increased manufacturing yields and reliability in a wide range of power co

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Date:

05/21/2020

1200V SiC MOSFET Targets Industrial and Automotive Market

Alpha and Omega Semiconductor Limited (AOS) announced the release ofthe new 1200V silicon carbide (SiC) aSiC MOSFET technology platform. Specifically targeting the industrial and automotive market, this next-generation technology will enable customers to achieve higher levels of efficiency and power density co

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Date:

05/19/2020

KEMET KC-LINK Cap for Fast Switching in Stock at TTI

TTI, Inc., has stock of KEMET's KC-LINK capacitor that offers industry leading performance for fast switching wide bandgap (WBG) semiconductor applications. With an operating temperature of 150°C, these capacitors can be mounted close to fast switching semiconductors in high power density applications. Very hig

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Date:

05/15/2020

Amplifier Evaluation Kit for Class-D Audio Systems

GaN Systems announced the debut and availability of a new amplifier evaluation kit for high sound quality Class-D audio systems. The evaluation kit includes a 2 channel, 200W per channel (8 ohm) Class-D audio amplifier and companion 400W, continuous power audio-grade SMPS. This solution highlights an easy plug an

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Date:

05/14/2020

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Figure 1: The stacked SiC FET cascode with an Si-MOSFET die on the source pad of a SiC JFET and its equivalent circuit

Go Green with SiC

Anup Bhalla, VP Engineering, UnitedSiC

Initiatives to go 'carbon' neutral' such as the '2050 long-term strategy' in the EU, to achieve net-zero greenhouse gas emissions, have sharpened engineers' focus on power conversion architectures and their efficiency. Minimising losses has always been a design engineer's goal anyway; low values directly reduce energy and cooling costs while equipment can be sma

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Date:

05/04/2020

Options are Endless for Power Semiconductor Device Selection

Kevin Parmenter, Director, Applications Engineering, Taiwan Semiconductor, NA

When I first started in the power electronics industry in the seventies, device selection was limited. We were moving from silicon bipolar transistors and rudimentary rectifiers to MOSFETs and better rectifiers. Surface-mount technology and co-packaged ICs with power devices and/or drivers were unheard of and usi

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Date:

05/03/2020

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Figure 1: Core losses for a typical ferrite material – source Ferroxcube 3C90 data

Transforming EV Charging with New Winding Techniques

Andrea Polti, Global Product Manager – Magnetics, Murata

Modern power conversion techniques all push towards higher efficiency for good reason; energy saving is clearly important but there are applications where functionality is also enhanced. Examples would be alternative energy systems such as solar and wind, and electric vehicle chargers where fewer losses equate to shorter recha

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Date:

05/03/2020