Wide-Bandgap Semis
December 2021
Navitas Semiconductor announced that its GaNFast power ICs with GaNSense technology have been upgraded to increase efficiency, power density, and access additional fast-charger markets.
GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x
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Date:
12/23/2021
Jay Cameron, who leads the power business over at Wolfspeed
Wolfspeed just signed a momentous agreement with General Motors to leverage SiC for GM’s electric vehicle programs. And given the gravity of the news, we’d like to delve a little deeper, talk about what it means for the industry and the general state of silicon carbide in electric vehicles.
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Date:
12/17/2021
Navitas Semiconductor announced that high-power GaN power IC samples are now available for the first time to data center, solar and electric vehicle (EV) customers worldwide.
Navitas GaNFast ICs were first introduced to mobile customers three years ago and have become a mainstream, disruptive force in
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Date:
12/16/2021
STMicroelectronics is introducing its third generation of STPOWER silicon-carbide (SiC) MOSFETs, advancing the state-of-the-art in power devices for electric-vehicle (EV) powertrains and other applications where power density, energy efficiency, and reliability are important target criteria.
ST has incorpora
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Date:
12/09/2021
The large EV market has given component manufacturers a huge commercial target to aim at, while the availability of advanced components has increased the performance of EVs to an extent that they are now desirable to a much wider base of customers. According to Dr. Gerald Deboy, Distinguished Engineer Power Semic
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Date:
12/02/2021
Microchip Technology Inc. announced a significant expansion of its Gallium Nitride (GaN) Radio Frequency (RF) power device portfolio with new MMICs and discrete transistors that cover frequencies up to 20 gigahertz (GHz). The devices combine high power-added efficiency (PAE) and high li
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Date:
12/01/2021
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