Wide-Bandgap Semis

October 2019
Moving from Electromechanical to Solid-State in Relays and Circuit Breakers

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Figure 1: Contact wear in an electromechanical relay

As a mature technology, electromechanical relays and circuit breakers are well established, however they continue to suffer from some inherent weaknesses. Moving to solid-state technology can address these but introduces its own challenges. So, what is the right solution? In the movies, whenever the lights go
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Date:
10/31/2019

GaN in Space

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Figure 1. Solar panels deployed on a satellite (Image courtesy of NASA)

The commercial space sector led by Space X and Blue Origin, plus companies like Northrop Grumman and Boeing, have given new life and accelerated NASA’s plans for the journey to Mars. The addition of the Artemis program, to establish a Moon base for the first leg of exploration and mining in the mid-2020s, will
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Date:
10/29/2019
eGaN FET Helps Time-of-Flight Lidar Systems 'See' Better
EL SEGUNDO, Calif.— EPC announces successful AEC Q101 qualification of the 15 V EPC2216 designed for lidar applications where increased accuracy is vital such as in self-driving cars and other time-of-flight (TOF) applications including facial recognition, warehouse automation, drones and mapping. The EPC2216,
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Date:
10/15/2019
SiC MOSFETs with 35% Lower Switching Loss
ROHM announced the availability of six new trench gate structure SiC MOSFETs (650V/1200V), the SCT3xxx xR series, ideal for server power supplies, UPS systems, solar power inverters, and EV charging stations requiring high efficiency.  The SCT3xxx xR series utilizes a 4-pin package (TO-247-4L) th
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Date:
10/08/2019
Sample Kits for GaN on SiC 0.15μm-gate Technology
Tao Yuan, Taiwan – WIN Semiconductors Corp has developed sample kits for its gallium nitride (GaN) based 0.15μm-gate technology. The NP15-00 mmWave compound semiconductor technology is ideal for transmit power amplifiers used in 5G mmWave radio access networks, satellite communications and radar systems.
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Date:
10/03/2019