Wide-Bandgap Semis
February 2026
STMicroelectronics' new MasterGaN power ICs Combine Flexibility with Advanced GaN Technology
STMicroelectronics has introduced MasterGaN6, beginning the second generation of the MasterGaN half-bridge family. The new power system in package couples an updated BCD driver with a high-performance GaN power transistor that has just 140mΩ RDS(on).
Leveraging the high integration already established
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Date:
02/24/2026
Navitas Unveils 5th Generation SiC Trench-Assisted Planar Technology
Navitas Semiconductor announced the launch of its 5th-generation GeneSiC technology platform. The High Voltage (HV) SiC Trench-Assisted Planar (TAP) MOSFET technology represents a significant technological leap over previous generations and will deliver an industry leading 1200V line of MOSFETs. It complements Na
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Date:
02/13/2026
SemiQ Establishes Distribution Partnership with NAC Semi to Expand Global Reach for Silicon Carbide Solutions
SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, has announced a distribution agreement with NAC Semi (NAC Group, Inc.), a global electronic component design services and distribution company.
This partnership
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Date:
02/12/2026
EPC Announces Strategic GaN Technology Licensing and Second Sourcing Agreement with Renesas
Efficient Power Conversion (EPC), the world leader in enhancement-mode gallium nitride (eGaN®) power devices, today announced a comprehensive licensing agreement with Renesas Electronics Corporation, a premier global supplier of advanced semiconductor solutions and high-voltage GaN transistors.
Under the agree
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Date:
02/11/2026
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Figure 1: The LTC7891 step-down (buck) converter schematic
Gallium nitride field-effect transistors (GaN FETs) offer faster switching speeds, smaller packages, and lower power losses than silicon FETs. These features allow power converters to run at higher frequencies, reducing overall solution size while maintaining high efficiency. While the basic DC-to-DC converter de
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Date:
02/01/2026
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Figure 1: Stability versus Current
- Low current condition (Vds=200V)
- High current condition (Vds=200V)
Engineers working with Silicon Carbide (SiC) MOSFETs encounter this firsthand when parallel devices begin exhibiting unexpected oscillations. What starts as a subtle waveform irregularity on an oscilloscope trace can quickly reveal deeper design sensitivities in high-speed switching environments.
Parallel-connected SiC MOSFE
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Date:
02/01/2026
Ally Winning, European Editor, PSD
Welcome to the February edition of Power Systems Design. The Special Report this month is on wide bandgap materials. GaN and SiC have revolutionized the industry in terms of efficiency and power density for a wide number of power applications. However, those benefits trade off with additional complexity, and as
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Date:
02/01/2026
Jason Lomberg, North American Editor, PSD
Welcome to the February issue!
We’re a mere month away from the Applied Power Electronics Conference (APEC), and I’ve started hearing hints and rumblings of the premier event for power design professionals.
A large event that attracts over 300 exhibitors and more than 6,000 attendees and which “foc
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Date:
02/01/2026
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