Wide-Bandgap Semis

September 2021

750V SiC FETs - Price, Performance or the Best of Both Worlds

According to UnitedSiC, that RDS(on) value of 6mohms is less than half the nearest SiC MOSFET competitor. The new device also provides a robust short-circuit withstand time rating of 5μs. The 9 new device/package options in the 750V SiC FET series include rated at 6, 9, 11, 23, 33, and 44mohms. All devices are avail

. . . Learn More

Date:

09/30/2021

Multi-Channel Power Amplifier Reduces Idle Loss by 35%

Idle power consumption and overall efficiency were key concerns of innosonix GmBH when designing its latest high-end Maxx Series multi-channel power amplifier. By changing from traditional silicon FETs to EPC’s EPC2059 eGaN FET the company reduced idle loss by 35% and lowered the on resistance to increase th

. . . Learn More

Date:

09/29/2021

New IC Family Takes Battery Charging to the Next Level

Ally Winning

Consumers are very demanding when it comes to electronic devices, such as mobile phones. They want the best screens, instant response and higher performance in smaller and smaller packages. The especially want it to function all day without charging, and if they do need it to charge, they want it done quickly.

. . . Learn More

Date:

09/27/2021

First Fully Configurable Digital Gate Driver for SiC MOSFETs

As demand for electric buses and other electrified heavy transport vehicles increases to meet lower emission targets, silicon carbide-based power management solutions are providing greater efficiencies in these transportation systems. To complement its broad portfolio of silicon carbide MOSFET discrete and module pr

. . . Learn More

Date:

09/20/2021

Integrated 3-Phase MOSFET Gate Driver Maximizes Battery Life

The TMC6140-LA 3-phase MOSFET gate driver integrates all three bottom shunt amplifiers to provide a complete motor drive solution with 30-percent improved power efficiency, while simplifying design by reducing component count by half when compared to similar solutions. The TMC6140-LA is optimized for performan

. . . Learn More

Date:

09/16/2021

UnitedSiC Announces Industry-Best 6mohm SiC FET

UnitedSiC has responded to the power designer’s requests for higher-performance, higher-efficient SiC FETs with the announcement of the industry’s best 750V, 6mohm device. At a RDS(on) value of less than half the nearest SiC MOSFET competitor, the new 6mohm device also provides a robust short-circuit withstand ti

. . . Learn More

Date:

09/15/2021

Jim Witham, CEO & Co-Founder, GaN Systems

GaN Systems Signs Semiconductor Capacity Agreement with BMW

GaN Systems announced the signing of a comprehensive Capacity Agreement with BMW Group for GaN Systems’ high-performance, automotive-grade GaN power transistors, which increase the efficiency and power density of critical applications in electric vehicles. GaN power semiconductors are a key ing

. . . Learn More

Date:

09/13/2021

ROHM, Geely Automobile Group Partner up on SiC Power Devices

Global semiconductor manufacturer ROHM, together with Geely Automobile Group Co., Ltd., a leading Chinese automobile manufacturer, have entered into a strategic partnership to develop advanced technologies in the automotive field. The companies have been collaborating on a variety of automotive applications since 2018, when they first agreed to a technical exchange. This partnership will further promote cooperation and accelerate innovation for automotive applications. Geely is working to extend the cruising range of electric vehicles while reducing battery costs and shortening charge t

. . . Learn More

Date:

09/08/2021

Renesas Shows Dialog Synergies with 39 Winning Combinations

Ally Winning

The Japanese company took that opportunity to host a press conference to explain the reasons for the acquisition further and to launch 39 of the company’s Winning Combinations to demonstrate how the Dialog portfolio meshes with Renasas products to allow Rensas to compete in new areas and applications. The fi

. . . Learn More

Date:

09/06/2021

Click image to enlarge

Table 1: Converter specifications

High Density Resonant Converter in a ⅛th Brick Size using eGaN FETs

Michael de Rooij and Amir Negahdar, Efficient Power Conversion Corporation

This article addresses the power density demand by presenting a high efficiency, high power density LLC resonant based converter that meets the requirements of modern data center and server rack power delivery systems. This DC-to-DC converter connects the 48 V intermediate bus to a downstream 12 V bu

. . . Learn More

Date:

09/01/2021

Click image to enlarge

Figure 1. Power semiconductor technologies now address all existing and emerging applications

The Evolution of Power Components

Ali Husain, Sr. Manager, Corporate Strategy & Marketing, onsemi

Electricity demand is only set to increase as the world middle class grows and automobiles, HVAC, and industrial drives become more electrified. The efficiency that can be achieved at each power stage (generation, distribution, conversion and consumption) will determine the level of increased burden on

. . . Learn More

Date:

09/01/2021

Click image to enlarge

Figure 1. WBG and silicon power switch Infineon brands positioning

Integration is What You Need

Ngee Hou Tan, Senior Product Marketing Manager, and Thomas Beer, Senior Director Strategic System Application Engineering CoolGaN™, Power & Sensor Systems division, Infineon Technologies

Introduction Today’s switch-mode power supplies (SMPS) are smaller, more efficient, and lower-cost than ever. The key to their performance is the power switch technologies at their heart – but how should designers choose the right material for this and find the best component to meet their needs? While silicon is the most widely-known constituent of semiconductors, a new group of wide bandgap (WBG) materials is increasingly finding its way into applications. One example is gallium nitride (

. . . Learn More

Date:

09/01/2021