Wide-Bandgap Semis
September 2021
According to UnitedSiC, that RDS(on) value of 6mohms is less than half the nearest SiC MOSFET competitor. The new device also provides a robust short-circuit withstand time rating of 5μs.
The 9 new device/package options in the 750V SiC FET series include rated at 6, 9, 11, 23, 33, and 44mohms. All devices are avail
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Date:
09/30/2021
Idle power consumption and overall efficiency were key concerns of innosonix GmBH when designing its latest high-end Maxx Series multi-channel power amplifier. By changing from traditional silicon FETs to EPC’s EPC2059 eGaN FET the company reduced idle loss by 35% and lowered the on resistance to increase th
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Date:
09/29/2021
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Consumers are very demanding when it comes to electronic devices, such as mobile phones. They want the best screens, instant response and higher performance in smaller and smaller packages. The especially want it to function all day without charging, and if they do need it to charge, they want it done quickly.
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Date:
09/27/2021
As demand for electric buses and other electrified heavy transport vehicles increases to meet lower emission targets, silicon carbide-based power management solutions are providing greater efficiencies in these transportation systems. To complement its broad portfolio of silicon carbide MOSFET discrete and module pr
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Date:
09/20/2021
The TMC6140-LA 3-phase MOSFET gate driver integrates all three bottom shunt amplifiers to provide a complete motor drive solution with 30-percent improved power efficiency, while simplifying design by reducing component count by half when compared to similar solutions.
The TMC6140-LA is optimized for performan
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Date:
09/16/2021
UnitedSiC has responded to the power designer’s requests for higher-performance, higher-efficient SiC FETs with the announcement of the industry’s best 750V, 6mohm device. At a RDS(on) value of less than half the nearest SiC MOSFET competitor, the new 6mohm device also provides a robust short-circuit withstand ti
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Date:
09/15/2021
Jim Witham, CEO & Co-Founder, GaN Systems
GaN Systems announced the signing of a comprehensive Capacity Agreement with BMW Group for GaN Systems’ high-performance, automotive-grade GaN power transistors, which increase the efficiency and power density of critical applications in electric vehicles.
GaN power semiconductors are a key ing
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Date:
09/13/2021
Global semiconductor manufacturer ROHM, together with Geely Automobile Group Co., Ltd., a leading Chinese automobile manufacturer, have entered into a strategic partnership to develop advanced technologies in the automotive field. The companies have been collaborating on a variety of automotive applications since 2018, when they first agreed to a technical exchange. This partnership will further promote cooperation and accelerate innovation for automotive applications.
Geely is working to extend the cruising range of electric vehicles while reducing battery costs and shortening charge t
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Date:
09/08/2021
The Japanese company took that opportunity to host a press conference to explain the reasons for the acquisition further and to launch 39 of the company’s Winning Combinations to demonstrate how the Dialog portfolio meshes with Renasas products to allow Rensas to compete in new areas and applications. The fi
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Date:
09/06/2021
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Table 1: Converter specifications
This article addresses the power density demand by presenting a high efficiency, high power density LLC resonant based converter that meets the requirements of modern data center and server rack power delivery systems. This DC-to-DC converter connects the 48 V intermediate bus to a downstream 12 V bu
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Date:
09/01/2021
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Figure 1. Power semiconductor technologies now address all existing and emerging applications
Electricity demand is only set to increase as the world middle class grows and automobiles, HVAC, and industrial drives become more electrified. The efficiency that can be achieved at each power stage (generation, distribution, conversion and consumption) will determine the level of increased burden on
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Date:
09/01/2021
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Figure 1. WBG and silicon power switch Infineon brands positioning
Introduction
Today’s switch-mode power supplies (SMPS) are smaller, more efficient, and lower-cost than ever. The key to their performance is the power switch technologies at their heart – but how should designers choose the right material for this and find the best component to meet their needs?
While silicon is the most widely-known constituent of semiconductors, a new group of wide bandgap (WBG) materials is increasingly finding its way into applications. One example is gallium nitride (
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Date:
09/01/2021
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