Wide-Bandgap Semis
March 2026
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Figure 1: Gate driver circuit diagram with a Bourns transformer
While gate driver-based converters deliver improved efficiency, speed and signal integrity, their high frequency switching features can produce elevated levels of conducted electromagnetic interference (EMI), posing challenges to electromagnetic compatibility (EMC) and overall system reliability. To solve this
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Date:
03/29/2026
Kevin Parmenter, Pins Out Engineering, for TSC America, Inc.
The total revenue of the power supply market, valued at $37.24 billion in 2024, is expected to grow at a CAGR of 4.73% from 2025 to 2032, reaching nearly $ 53.90 billion, according to Maximize Market Research’s latest forecast.
The merchant power supply market, comprising standalone power conversion products
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Date:
03/01/2026
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Figure 1: The evolution of semiconductor architectures from HEXFET (left) to SuperJunction (middle) and the latest SuperQ technology (right), with dielectric charge-balancing structure shown in red
In the 1970s, the 1D power MOSFET, aka HEXFET™, was introduced. The 1980s saw the launch of the IGBT, and in the 1990s, reduced surface field (RESURF) devices – aka SuperJunction™ devices were introduced.
Over the last two decades, improvements in silicon power devices have been largely evolutionary rather th
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Date:
03/01/2026
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Figure 1: A few of the many RECOM DC/DC modules optimized for WBG gate driver applications
Silicon Carbide (SiC) and Gallium Nitride (GaN) are wide‑bandgap (WBG) semiconductor materials offering advantages over traditional silicon (Si) in power electronics because they switch faster with lower losses. They are gaining significant market share in applications where high efficiency and power density ar
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Date:
03/01/2026
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Figure 1: Silver adhesive paste for die-bonding
As power electronics evolve with the rise of wide-bandgap semiconductors like silicon carbide (SiC) and gallium nitride (GaN), the demand for advanced die bonding solutions becomes increasingly critical. Die bonding solutions enable power systems that operate at significantly higher switching frequencies, de
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Date:
03/01/2026
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