Wide-Bandgap Semis

September 2020
Extremely Compact Isolated Auxiliary Supply for SiC-MOSFET Gate Driver

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Figure 1: Topology of a SiC-MOSFET half-bridge with highlighted parasitic inductances

With the increasing spread of high-voltage power semiconductor components build with silicon carbide (SiC) technology, which operate at switching frequencies above 100 kHz, the requirements for their gate control are becoming more and more demanding. Besides the bipolar, positive and negative driving voltages fo
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Date:
09/30/2020

Shielded flat-wire coil
This coil is designed for high-efficiency DC/DC converters in automotive applications. The characteristic features of this flat-wire coil with its MnZn core are its high rated current (IR 38-47 A) and a high saturation performance. At an RDC value of 0.6 to 1.1 Ω, its resistance is lower than that of comparable c
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Date:
09/27/2020
Advanced H2S protection of IGBT modules enhances lifetime
Harsh environments with critical levels of H2S can be found especially in paper production, mining, wastewater and petrochemical processing as well as in the rubber industry.H2S is the most critical corrosive contaminant for power semiconductors. During operation, IGBT modules are usually heated up to high temperature l
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Date:
09/27/2020
ROHM and LEADRIVE Establish Joint Laboratory
SiC power devices have been adopted increasingly in onboard vehicle chargers and DC/DC converters. These devices provide several advantages compared to silicon-based power devices such as IGBTs. One key benefit: significantly lower losses during both switching and conduction along with being able to operate at hi
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Date:
09/27/2020
Upgrade to DesignSpark Mechanical 3D CAD modelling software
Version 5.0 offers new features, enhancements and customisation options that have been developed following feedback from users. The new release coincides with the 10-year anniversary of DesignSpark. Developed in conjunction with Ansys Inc., the leading provider of flexible and affordable 3D modelling software
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Date:
09/27/2020
SiC Power Modules to Support Delta’s Solar PV Inverters
The NXH40B120MNQ family of full SiC power modules integrate a 1200 V, 40mΩ SiC MOSFET and 1200 V, 40 A SiC boost diode with dual boost stage. The use of SiC technology delivers the low reverse recovery and fast switching characteristics needed to achieve the high levels of power efficiency required in applicati
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Date:
09/27/2020
4 kW Analog-Controlled Totem-pole GaN Evaluation Board
Transphorm, Inc. announced availability of its newest evaluation board, the TDTTP4000W065AN. Designed for single-phase AC-to-DC power conversion up to 4 kilowatts (kW), this board uses the bridgeless totem-pole power factor correction (PFC) topology with a traditional analog control. This pairing provides fast an
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Date:
09/07/2020
What are the advantages of SiC-based designs and how can you implement them?

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Figure 1 Technology positioning – Si, SiC and GaN

The global trends - such as digitalization and energy efficiency - that have emerged and accelerated in the past few years pose new challenges to the manufacturers as well as the semiconductor market. Developing power semiconductor devices that contribute to highly efficient power management systems is on the ag
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Date:
09/03/2020
Low-Inductance SiC Power Module, Gate Driver Kit Available
The transformation to electrify transportation – from trains, trams, and trolleys to buses, automobiles and EV chargers – continues at a rapid pace, as countries shift toward improved modes of transit with greater efficiency and innovative technology. Microchip Technology Inc. announced its AgileSwitch digital pr
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Date:
09/01/2020