Next-gen GaN ‘in-box’ charger enables 1-100% in 19 minutes, with major launch in New York
Navitas Semiconductor announced that OnePlus has once again chosen GaNFast next-gen power ICs to ultra-fast-charge its new flagship smartphone, the OnePlus 10T.
The new OnePlus 10T features the latest Qualcomm Snapdragon® 8+ Gen 1 (4 nm) chipset, a 120 Hz FHD + AMOLED display screen, and 50 MP main camera, with advanced Cryo-Velocity Vapor cooling, all driven by a powerful 4,800 mAhr battery. The 150W-capable SUPERVOOC Endurance Edition delivers up to a day’s power after just 10 minutes of charging, with a full charge – from 1-100% – taking only 19 minutes.
New York was the focus for the 10T’s debut, with a special launch event at the famous Gotham Hall, and a Navitas-OnePlus co-operative promotion on the Nasdaq Tower in Times Square.
GaNFast ICs integrate GaN power with drive, control, protection and sensing to enable 3x faster charging with up to 40% energy savings in only half the size and weight of legacy silicon solutions. Using an NV6125 GaN IC for the high-frequency boost PFC, followed by a high-frequency QR flyback converter, the 160 W charger measures just 58 x 57 x 30 mm (99 cc) with power density over 1.6W/cc.
“Both OnePlus and Navitas focus on more speed and more power with cool operation,” said Mr. David Carroll, Navitas’ senior vice-president of world-side sales. “OnePlus is a very innovative company and appreciates the leading-edge efficiency, high quality, and world-leading environmental-benefits of GaNFast power ICs, as each one shipped saves 4 kg of CO2 vs. legacy silicon chips.”
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