1200V SiC MOSFET Targets Industrial and Automotive Market
Alpha and Omega Semiconductor Limited (AOS) announced the release ofthe new 1200V silicon carbide (SiC) aSiC MOSFET technology platform. Specifically targeting the industrial and automotive market, this next-generation technology will enable customers to achieve higher levels of efficiency and power density compared to existing silicon solutions.
Optimized for minimizing both AC and DC power losses through a low gate resistance (RG) design combined with the low increase in on-resistance (RDS,ON) over temperature, the aSiC technology can achieve the highest efficiencies across a wide range of application switching frequencies and temperatures. This higher efficiency can result in significantly reduced system costs and total bill-of-materials for the many industrial uses, including solar inverters, UPS systems, and EV inverter and charging systems.
The first product release for this new platform is the AOK065V120X2, a 1200V 65mWSiC MOSFET available in a TO-247-3L package. For ease of use, the AOK065V120X2 is designed to be driven with a -5V/+15V gate drive, allowing the broadest compatibility with existing high voltage IGBT and SiC gate drivers. Operation with a unipolar drive is also possible with optimized system design. Additional benefits of the aSiC platform is a robust UIS capability, enhanced short circuit performance, and a high maximum operating temperature of 175oC.
The aSiC MOSFET portfolio will expand later this year to include a broader range of on-resistance and additional package options with full AEC-Q101 qualification.
Pricing and Availability
As part of the first wave release, the AOK065V120X2 (1200V 65mOhm TO-247-3L) is immediatelyavailable for production quantities.
