25V Technology Offers Low On-State Resistance


Optimal power efficiency using the latest technology sets a new industry standard for high power density applications

SUNNYVALE, Calif.– Alpha and Omega Semiconductor Limited introduced the AONX38168, which utilizes the latest 25V N-Channel MOSFET Technology. The XSPairFET includes the low-side and high-side MOSFET in a leadless surface mount package, (5mm x 6mm outline) ideal for synchronous DC/DC converter applications.

The AONX38168 is designed with the latest bottom source packaging technology which has a lower switch node ringing due to lower parasitic inductance.  The new device offers a higher power density comparative to existing solutions, and is well suited for server and telecommunication markets. The AONX38168 is the newest generation of XSPairFETs, offering the lowest on-state resistance and best Figure of Merits (Rdson x Qg).  The XSPairFET has bottom source connection for the low-side MOSFET which can result in improved thermal performance, simplified layout, and reduced EMI.

Pricing and Availability

The AONX38168 is immediately available in production quantities with a lead-time of 12-14 weeks. The unit price for 1,000 pieces is $1.7.

For more information, please visit www.aosmd.com.