40 V GaN Power Transistor is 8x Smaller Than Equivalently Rated MOSFETS

Date
12/19/2017

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EPC2049 GaN power transistor offers power systems designers a 40 V, 5 m Ω power transistor about 8 times smaller than equivalently rated silicon MOSFETs for point of load converters, LiDAR, and low inductance motor drive.

EL SEGUNDO, Calif. — EPC announces the EPC2049 power transistor for use in applications including point-of-load converters, LiDAR, envelope tracking power supplies, class-D audio, and low inductance motor drives. The
EPC2049 has a voltage rating of 40 V and maximum RDS(on) of 5 mΩ with a 175 A pulsed output current.

The chip-scale packaging of the EPC2049 handles thermal conditions far better than the plastic packaged MOSFETs since the heat is dissipated directly to the environment with chip-scale devices, whereas the heat from the MOSFET die is held within a plastic package. It measures a mere 2.5 mm x 1.5 mm (3.75 mm2). Designers no longer have to choose between size and performance – they can have both!

Price and Availability
The EPC2049 eGaN FET is priced for 1K units at $2.19 each and is available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en
 

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