650 V CoolMOS CFD7d perform in resonant topologies


Infineon Technologies’ 650 V CoolMOS CFD7 product family meets SMPS needs in industrial applications requiring 650 V breakdown voltage.

Extending the voltage range of the CoolMOS CFD7 family the 650 V device succeeds the CoolMOS CFD2. The added 650 V products match LLC and zero-voltage-switching phase-shift full-bridge topologies in which they are delivering numerous advantages compared to previous generations. The additional 50 V breakdown voltage, an integrated fast body diode, and improved switching performance make the product family a perfect fit for contemporary designs. Very low reverse-recovery charge and excellent thermal behavior add to the benefits.

The switching losses, as well as RDS(on) dependency over-temperature, are significantly reduced. The product family provides very good hard-commutation ruggedness. Thanks to the improved gate charge (Q g) and the fast switching performance, the 650 V CoolMOS CFD7 family increases efficiency over the whole load range. In the primarily targeted SMPS application, these MOSFETs provide outstanding light-load and improved full-load efficiency compared to the competition. Furthermore, the best-in-class R DS(on) enables customers to increase the power density level of SMPS at a competitive price.


The 650 V CoolMOS CFD7 in TO-220, TO-247, and TO-247 4-pin packages can be ordered now.